Quantum-dot lasers: Principal components of the threshold current density View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-09

AUTHORS

S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. M. Georgievskii, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg

ABSTRACT

Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasing the degree of carrier localization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method. More... »

PAGES

947-949

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187140

DOI

http://dx.doi.org/10.1134/1.1187140

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044138585


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