Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-02

AUTHORS

M. V. Maksimov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop’ev, I. V. Kochnev, N. N. Ledentsov, A. V. Lunev, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, Zh. I. Alferov, D. Bimberg

ABSTRACT

Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T0=385 K) up to 50 °C. More... »

PAGES

124-126

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187093

DOI

http://dx.doi.org/10.1134/1.1187093

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035925358


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