Photoluminescence of InSb quantum dots in GaAs and GaSb matrices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-01

AUTHORS

A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, B. Ya. Mel’tser, P. V. Neklyudov, S. V. Shaposhnikov, B. V. Volovik, I. L. Krestnikov, A. V. Sakharov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, D. Bimberg

ABSTRACT

The photoluminescent properties of quantum dots formed in the deposition of an InSb thin film (1–3 monolayers) on GaAs(100) and GaSb(100) surface are investigated. The results indicate the importance of As-Sb substitution reactions in the formation of quantum dots on a GaAs surface.

PAGES

55-57

Journal

TITLE

Semiconductors

ISSUE

1

VOLUME

31

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187086

DOI

http://dx.doi.org/10.1134/1.1187086

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006297490


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