Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon View Full Text


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Article Info

DATE

1997-07

AUTHORS

E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, H. Kuehne

ABSTRACT

The photoluminescence of erbium ions in phosphorus-doped a-Si:H films has been investigated. The observed increase in the Er photoluminescence with increasing defect density in the samples and the correlation of the temperature variation of the Er photoluminescence and defect-associated photoluminescence intensities are explained on the basis of a model of excitation of Er ions as a result of Auger recombination with defect participation. More... »

PAGES

738-739

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187081

DOI

http://dx.doi.org/10.1134/1.1187081

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047476060


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