Lateral association of vertically coupled quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-07

AUTHORS

A. F. Tsatsul’nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, P. S. Kop’ev

ABSTRACT

The modification produced in the structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In0.5Ga0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies. More... »

PAGES

722-725

Journal

TITLE

Semiconductors

ISSUE

7

VOLUME

31

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187076

DOI

http://dx.doi.org/10.1134/1.1187076

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008651886


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