Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-10

AUTHORS

V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul’nikov, A. Yu. Egorov, A. R. Kovsh, M. V. Maksimov, A. A. Suvorova, N. A. Bert, P. S. Kop’ev

ABSTRACT

Arrays of strained InAs islands in an (In, Ga)As matrix on an InP(100) substrate are synthesized by molecular-beam epitaxy, and their structural and optical properties are investigated. According to transmission electron microscope and high-energy electron diffraction data, the critical thickness corresponding to the onset of island growth is 3 monolayers. The resulting InAs islands are coherently strained, and their base diameter varies from 20 nm to 90 nm. The formation of islands produces in the photoluminescence spectra a dominant long-wavelength line, which shifts toward lower energies as the effective thickness of the InAs increases. The radiation emitted by the InAs islands spans a wavelength range of 1.65–2 µm. More... »

PAGES

1080-1083

Journal

TITLE

Semiconductors

ISSUE

10

VOLUME

31

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187030

DOI

http://dx.doi.org/10.1134/1.1187030

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041223098


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