Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-10

AUTHORS

N. L. Bazhenov, G. G. Zegrya, V. I. Ivanov-Omskii, M. P. Mikhaulova, M. Yu. Mikhailov, K. D. Moiseev, V. A. Smirnov, Yu. P. Yakovlev

ABSTRACT

The electroluminescence of the single unconfined type-II heterojunction p-GaInAsSb/p-InAs was investigated in the temperature range T=4.2–77 K. As the temperature was reduced below T=77 K, the luminescence bands with maxima at 311 meV (band A) and 384 meV (band B) were found to shift toward higher energies. At 4.2 K, the short-wave band split into two bands, B1 and B2. These results are explained in terms of a model involving recombinations of electrons from the conduction band to an acceptor level of InAs, and also recombinations of electrons and holes localized in self-consistent quantum wells on either side of the heterojunction. More... »

PAGES

1046-1048

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187022

DOI

http://dx.doi.org/10.1134/1.1187022

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050395456


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