A model of hopping and band DC photoconduction in doped crystals View Full Text


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Article Info

DATE

2000-02

AUTHORS

N. A. Poklonskii, S. Yu. Lopatin

ABSTRACT

Expressions for the screening length and the ambipolar diffusion length are derived, for the first time, for the case where hopping conduction and band conduction coexist in semiconductors with hydrogen-like impurities. A method is proposed for calculating the diffusion coefficient of electrons (holes) hopping between impurity atoms from data on the Hall effect, in the case where the hopping and band conductivities are equal. An interpretation is given of available experimental data on hopping photoconduction between acceptors (Ga) and donors (As) in p-Ge at T=4.2 K doped by a transmutation method. It is shown that the relative magnitude of the mobilities of electrons hopping between donors and holes hopping between acceptors can be found from the hopping photoconductivity measured as a function of the intensity of band-to-band optical carrier excitation. More... »

PAGES

224-229

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1131150

DOI

http://dx.doi.org/10.1134/1.1131150

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030459545


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