Reduction of elastic strains in directly-bonded silicon structures View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

1999-11

AUTHORS

T. S. Argunova, R. F. Vitman, I. V. Grekhov, L. S. Kostina, T. V. Kudryavtseva, M. Yu. Gutkin, A. V. Shturbin, J. Härtwig, M. Ohler, E. D. Kim, S. Ch. Kim

ABSTRACT

The elastically strained state of the interface in directly-bonded silicon structures has been studied by x-ray diffraction topography and IR spectrometry. The pattern of the contrast observed in the x-ray topographs and the intensity oscillations in the IR spectra indicate a periodic strain distribution caused by the long-period surface microroughness on the plates to be bonded. The local microroughness did not exceed 2 Å, and it did not noticeably affect the interface structure. Two types of the structure were subjected to a comparative analysis, (i) with a smooth interface prepared by standard direct-bonding technology, and (ii) with an interface displaying a regular relief. The strain level in type-II structures was found to be lower by more than an order of magnitude. A model is proposed to account for the observed reduction of elastic strains at the bonded sections of the interface in terms of elastic relaxation of the free surfaces in the relief voids through their deflection and displacement. More... »

PAGES

1790-1798

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1131099

DOI

http://dx.doi.org/10.1134/1.1131099

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016195795


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185 grid-institutes:grid.462405.1 schema:alternateName Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia
186 schema:name Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia
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188 grid-institutes:grid.4886.2 schema:alternateName A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
189 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
190 rdf:type schema:Organization
191 grid-institutes:grid.5398.7 schema:alternateName European Synchrotron Radiation Facility, 38043, Grenoble Cedex, France
192 schema:name European Synchrotron Radiation Facility, 38043, Grenoble Cedex, France
193 rdf:type schema:Organization
 




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