doi
10.1134/1.1130623
compensation
ions
1998-10
approximation
impurities
photoexcitation rate
dependence
data
1998-10-01
experimental data
interimpurity photoexcitation
diffusion length
false
single species
length
effective lifetime
electrons
species
photoconduction
electrostatic field
articles
formation of ions
charge carriers
state
degree
current
transition
carriers
photoconductivity
continuum approximation
multiply
calculations
photoexcitation
atoms
1636-1640
explanation
lifetime
https://doi.org/10.1134/1.1130623
en
Stationary hopping photoconduction among multiply charged impurity atoms in crystals
charge state
theoretical explanation
degree of compensation
hopping current
crystals
derivation
A derivation of the equation for the hopping current of electrons and holes (electron vacancies) among impurities of a single species in three charge states [(−1), (0), and (+1)] is given in the continuum approximation. The screening length of an electrostatic field and the diffusion length of charge carriers are calculated. The dependence of the effective lifetime of electrons hopping among impurities relative to (−1)→(+1) transitions [and of holes relative to (+1)→(−1) transitions] on the degree of compensation and the rate of interimpurity photoexcitation, which stimulates the formation of ions, is obtained. The calculations of the dependence of the hopping photoconductivity on photoexcitation rate are consistent with known experimental data, which have not previously found a theoretical explanation.
hopping photoconductivity
equations
https://scigraph.springernature.com/explorer/license/
formation
2022-01-01T18:07
impurity atoms
holes
field
rate
screening length
article
Physical Sciences
10
S. Yu.
Lopatin
Poklonskii
N. A.
dimensions_id
pub.1041860286
Atomic, Molecular, Nuclear, Particle and Plasma Physics
40
Belarus State University, 220050, Minsk, Belarus
Belarus State University, 220050, Minsk, Belarus
0367-3294
Pleiades Publishing
Physics of the Solid State
1063-7834
Springer Nature - SN SciGraph project