Donor-acceptor recombination in type-II GaAs/AlAs superlattices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-09

AUTHORS

K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, S. S. Chipkin

ABSTRACT

A study is reported of steady-and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)7(AlAs)9 superlattices grown by MBE simultaneously on (311)A-and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined. More... »

PAGES

1577-1581

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1130604

DOI

http://dx.doi.org/10.1134/1.1130604

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015402333


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