On electrostatic models of a metal-insulator phase transition in crystalline semiconductors with hydrogen-like impurities View Full Text


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Article Info

DATE

1998-01

AUTHORS

N. A. Poklonskii, A. I. Syaglo

ABSTRACT

Two well-known models for calculating the critical density NC of a metal-insulator transition, as a function of the Bohr radius aH of an isolated impurity as temperature T→0 K, are refined by making allowance for the screening of ions by electrons hopping along impurities. In one model, the transition at NC1 is explained by the appearance of delocalized electrons as the impurity band is displaced into the allowed-energy band as a result of a decrease in the electron (hole) affinity of ionized impurities. In the other model the transition is explained by an unbounded increase in the static permittivity of the crystal as the density of impurity atoms increases to NC2. The obtained approximations NC11/3aH≈0.24 and NC21/3aH≈0.20 for the degree of compensation K=0.01 describe existing experimental data for 1 More... »

PAGES

132-135

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1130252

DOI

http://dx.doi.org/10.1134/1.1130252

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045118053


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