JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0203", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Classical Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Osipov", 
        "givenName": "V. Yu.", 
        "id": "sg:person.011737110415.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011737110415.43"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1997-03", 
    "datePublishedReg": "1997-03-01", 
    "description": "Switching from a state with a steady-state nonequilibrium depletion and low current into the \u201con\u201d state with a high current and low voltage drop on the structure is observed in highly doped n+-polysilicon-tunnel-oxide-n-silicon structures. The structures were prepared on n-silicon substrates with a resistivity of 25 \u03a9\u00b7cm. A structure with an oxide thickness of 23 \u00c5 can be switched on both by a radiation pulse with small reverse bias on the structure (50 V) and under dark conditions by increasing the reverse bias to 250\u2013300 V. In the \u201con\u201d state Auger carrier production is the internal source of minority carriers that is required for compensating tunnel leakage of holes into the n+-polysilicon and for maintaining a quasiequilibrium inversion layer of holes at the n-Si-SiO2 boundary.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1129866", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136591", 
        "issn": [
          "0367-3294", 
          "1063-7834"
        ], 
        "name": "Physics of the Solid State", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "39"
      }
    ], 
    "keywords": [
      "reverse bias", 
      "low voltage drop", 
      "small reverse bias", 
      "oxide thickness", 
      "oxide layer", 
      "silicon substrate", 
      "current switching", 
      "voltage drop", 
      "silicon structures", 
      "tunnel leakage", 
      "minority carriers", 
      "bistable structure", 
      "low currents", 
      "inversion layer", 
      "carrier production", 
      "layer", 
      "radiation pulses", 
      "polysilicon", 
      "silicon", 
      "resistivity", 
      "structure", 
      "thickness", 
      "holes", 
      "internal sources", 
      "current", 
      "oxide", 
      "drop", 
      "substrate", 
      "dark conditions", 
      "switching", 
      "leakage", 
      "boundaries", 
      "pulses", 
      "conditions", 
      "carriers", 
      "state", 
      "source", 
      "bias", 
      "production", 
      "depletion"
    ], 
    "name": "Current switching in bistable structures: Heavily doped n+-polysilicon-tunnel-oxide layer-n-silicon", 
    "pagination": "402-406", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004305091"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1129866"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1129866", 
      "https://app.dimensions.ai/details/publication/pub.1004305091"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_297.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1129866"
  }
]

Download the RDF metadata as:  json-ld nt turtle xml License info

This table displays all metadata directly associated to this object as RDF triples.

106 TRIPLES      21 PREDICATES      68 URIs      58 LITERALS      6 BLANK NODES