Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-03-03

AUTHORS

Sheng-Wen Wang, Kuo-Bin Hong, Yu-Lin Tsai, Chu-Hsiang Teng, An-Jye Tzou, You-Chen Chu, Po-Tsung Lee, Pei-Cheng Ku, Chien-Chung Lin, Hao-Chung Kuo

ABSTRACT

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated. More... »

PAGES

42962

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/srep42962

DOI

http://dx.doi.org/10.1038/srep42962

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084131193

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/28256529


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