Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2016-12

AUTHORS

Yogeenth Kumaresan, Yusin Pak, Namsoo Lim, Yonghun Kim, Min-Ji Park, Sung-Min Yoon, Hyoc-Min Youn, Heon Lee, Byoung Hun Lee, Gun Young Jung

ABSTRACT

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles. More... »

PAGES

37764

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/srep37764

DOI

http://dx.doi.org/10.1038/srep37764

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034513263

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/27876893


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