Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2016-12

AUTHORS

Yue Zhang, Xueying Zhang, Jingtong Hu, Jiang Nan, Zhenyi Zheng, Zhizhong Zhang, Youguang Zhang, Nicolas Vernier, Dafine Ravelosona, Weisheng Zhao

ABSTRACT

Racetrack memory (RM) has sparked enormous interest thanks to its outstanding potential for low-power, high-density and high-speed data storage. However, since it requires bi-directional domain wall (DW) shifting process for outputting data, the mainstream stripe-shaped concept certainly suffers from the data overflow issue. This geometrical restriction leads to increasing complexity of peripheral circuits or programming as well as undesirable reliability issue. In this work, we propose and study ring-shaped RM, which is based on an alternative mechanism, spin orbit torque (SOT) driven chiral DW motions. Micromagnetic simulations have been carried out to validate its functionality and exhibit its performance advantages. The current flowing through the heavy metal instead of ferromagnetic layer realizes the "end to end" circulation of storage data, which remains all the data in the device even if they are shifted. It blazes a promising path for application of RM in practical memory and logic. More... »

PAGES

35062

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/srep35062

DOI

http://dx.doi.org/10.1038/srep35062

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017877118

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/27725741


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39 schema:description Racetrack memory (RM) has sparked enormous interest thanks to its outstanding potential for low-power, high-density and high-speed data storage. However, since it requires bi-directional domain wall (DW) shifting process for outputting data, the mainstream stripe-shaped concept certainly suffers from the data overflow issue. This geometrical restriction leads to increasing complexity of peripheral circuits or programming as well as undesirable reliability issue. In this work, we propose and study ring-shaped RM, which is based on an alternative mechanism, spin orbit torque (SOT) driven chiral DW motions. Micromagnetic simulations have been carried out to validate its functionality and exhibit its performance advantages. The current flowing through the heavy metal instead of ferromagnetic layer realizes the "end to end" circulation of storage data, which remains all the data in the device even if they are shifted. It blazes a promising path for application of RM in practical memory and logic.
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