Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2016-09

AUTHORS

Sung Kyu Jang, Jiyoun Youn, Young Jae Song, Sungjoo Lee

ABSTRACT

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality. More... »

PAGES

30449

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  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/srep30449

    DOI

    http://dx.doi.org/10.1038/srep30449

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1020572450

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/27458024


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