Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2015-05

AUTHORS

Yanda Ji, Yin Zhang, Min Gao, Zhen Yuan, Yudong Xia, Changqing Jin, Bowan Tao, Chonglin Chen, Quanxi Jia, Yuan Lin

ABSTRACT

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. More... »

PAGES

4854

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/srep04854

DOI

http://dx.doi.org/10.1038/srep04854

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036611114

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/24798056


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