Fast linear electro-optic effect in a centrosymmetric semiconductor View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

Mathias Berciano, Guillaume Marcaud, Pedro Damas, Xavier Le Roux, Paul Crozat, Carlos Alonso Ramos, Diego Pérez Galacho, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, Laurent Vivien

ABSTRACT

Silicon holds the promise of hosting future photonic circuitries, but its centrosymmetric crystal structure precludes the exploitation of beneficial second-order nonlinearities. The authors demonstrate that strain fields can enable such nonlinearities in silicon, showing high-speed optical modulation through the so-called Pockels effect.

PAGES

64

Journal

TITLE

Communications Physics

ISSUE

1

VOLUME

1

From Grant

  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/s42005-018-0064-x

    DOI

    http://dx.doi.org/10.1038/s42005-018-0064-x

    DIMENSIONS

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