Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation View Full Text


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Article Info

DATE

2019-12

AUTHORS

Praveen Kumar, Pooja Devi, Rishabh Jain, S. M. Shivaprasad, R. K. Sinha, Guofu Zhou, Richard Nötzel

ABSTRACT

Nitride based photoelectrodes are promising candidates for photoelectrochemical water splitting and hydrogen generation but suffer from quick degradation. Here the authors show indium gallium nitride activated by InN quantum dots on silicon which can be used as stable photoanode for efficient water splitting.

PAGES

4

References to SciGraph publications

  • 2014-12. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting in NATURE COMMUNICATIONS
  • 2016-06-21. Unassisted photoelectrochemical water splitting exceeding 7% solar-to-hydrogen conversion efficiency using photon recycling in NATURE COMMUNICATIONS
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  • 2013-12. Codoping titanium dioxide nanowires with tungsten and carbon for enhanced photoelectrochemical performance in NATURE COMMUNICATIONS
  • 2016-10-31. Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30% in NATURE COMMUNICATIONS
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  • 2015-12. Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure in NATURE COMMUNICATIONS
  • 2017-04. Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures in NATURE ENERGY
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  • 2016-10. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires in SCIENTIFIC REPORTS
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    http://scigraph.springernature.com/pub.10.1038/s42004-018-0105-0

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