Patterning metal contacts on monolayer MoS 2 with vanishing Schottky barriers using thermal nanolithography View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-01

AUTHORS

Xiaorui Zheng, Annalisa Calò, Edoardo Albisetti, Xiangyu Liu, Abdullah Sanad M. Alharbi, Ghidewon Arefe, Xiaochi Liu, Martin Spieser, Won Jong Yoo, Takashi Taniguchi, Kenji Watanabe, Carmela Aruta, Alberto Ciarrocchi, Andras Kis, Brian S. Lee, Michal Lipson, James Hone, Davood Shahrjerdi, Elisa Riedo

ABSTRACT

Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade.

PAGES

17

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41928-018-0191-0

DOI

http://dx.doi.org/10.1038/s41928-018-0191-0

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1111273973


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