Electrical devices from top-down structured platinum diselenide films View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-12

AUTHORS

Chanyoung Yim, Vikram Passi, Max C. Lemme, Georg S. Duesberg, Cormac Ó Coileáin, Emiliano Pallecchi, Dalal Fadil, Niall McEvoy

ABSTRACT

Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness-dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization in field-effect devices. Finally, the influence of edge contacts at the metal–PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps toward realizing high-performance nanoelectronic devices based on group-10 TMDs. Transport measurements on channels of layered PtSe2 give insight into the realization of high-performance nanoelectronic PtSe2 devices. A team led by Niall McEvoy at Trinity College Dublin investigated the electrical contact properties of PtSe2 channels with controlled dimensions and thicknesses. Electron beam lithography was used to fabricate structures with different contact metals and different PtSe2 film thicknesses, and the corresponding contact resistivity and sheet resistance of the PtSe2 devices were extracted from transmission line method measurements. The charge-transport characteristics of the PtSe2 devices revealed that edge-contacted structures are able reduce the contact resistivity when compared to conventional devices with top contacts, thanks to enhancement of the carrier injection at the contacts. These results may pave the way to optimal design of PtSe2 nanoelectronic devices. More... »

PAGES

5

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41699-018-0051-9

DOI

http://dx.doi.org/10.1038/s41699-018-0051-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101191590


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Bundeswehr University Munich", 
          "id": "https://www.grid.ac/institutes/grid.7752.7", 
          "name": [
            "Department of Electrical Engineering and Computer Science, University of Siegen, H\u00f6lderlinstra\u00dfe 3, 57076, Siegen, Germany", 
            "Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universit\u00e4t der Bundeswehr M\u00fcnchen, Werner-Heisenberg-Weg 39, 85577, Neubiberg, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yim", 
        "givenName": "Chanyoung", 
        "id": "sg:person.01210226513.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01210226513.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "RWTH Aachen University", 
          "id": "https://www.grid.ac/institutes/grid.1957.a", 
          "name": [
            "Department of Electrical Engineering and Computer Science, University of Siegen, H\u00f6lderlinstra\u00dfe 3, 57076, Siegen, Germany", 
            "Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Passi", 
        "givenName": "Vikram", 
        "id": "sg:person.013025013425.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013025013425.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "RWTH Aachen University", 
          "id": "https://www.grid.ac/institutes/grid.1957.a", 
          "name": [
            "Department of Electrical Engineering and Computer Science, University of Siegen, H\u00f6lderlinstra\u00dfe 3, 57076, Siegen, Germany", 
            "Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lemme", 
        "givenName": "Max C.", 
        "id": "sg:person.01202416450.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01202416450.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Trinity College Dublin", 
          "id": "https://www.grid.ac/institutes/grid.8217.c", 
          "name": [
            "Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universit\u00e4t der Bundeswehr M\u00fcnchen, Werner-Heisenberg-Weg 39, 85577, Neubiberg, Germany", 
            "Centre for the Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland", 
            "School of Chemistry, Trinity College Dublin, Dublin 2, Ireland"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Duesberg", 
        "givenName": "Georg S.", 
        "id": "sg:person.0736050601.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0736050601.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Trinity College Dublin", 
          "id": "https://www.grid.ac/institutes/grid.8217.c", 
          "name": [
            "Centre for the Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Coile\u00e1in", 
        "givenName": "Cormac \u00d3", 
        "id": "sg:person.016420015067.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016420015067.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Electronics, Microelectronics and Nanotechnology", 
          "id": "https://www.grid.ac/institutes/grid.461903.9", 
          "name": [
            "Institut d\u2019Electronique, de Micro\u00e9lectronique et de Nanotechnologie (IEMN), 59652, Villeneuve d\u2019Ascq, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pallecchi", 
        "givenName": "Emiliano", 
        "id": "sg:person.01130153524.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01130153524.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Electronics, Microelectronics and Nanotechnology", 
          "id": "https://www.grid.ac/institutes/grid.461903.9", 
          "name": [
            "Institut d\u2019Electronique, de Micro\u00e9lectronique et de Nanotechnologie (IEMN), 59652, Villeneuve d\u2019Ascq, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fadil", 
        "givenName": "Dalal", 
        "id": "sg:person.012172000542.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012172000542.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Trinity College Dublin", 
          "id": "https://www.grid.ac/institutes/grid.8217.c", 
          "name": [
            "Centre for the Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland", 
            "School of Chemistry, Trinity College Dublin, Dublin 2, Ireland"
          ], 
          "type": "Organization"
        }, 
        "familyName": "McEvoy", 
        "givenName": "Niall", 
        "id": "sg:person.01302757460.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01302757460.19"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.4898584", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000498297"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/srep30084", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003447881", 
          "https://doi.org/10.1038/srep30084"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat4452", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003479312", 
          "https://doi.org/10.1038/nmat4452"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2014.215", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008640603", 
          "https://doi.org/10.1038/nnano.2014.215"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201303230", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009589898"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acsnano.5b00985", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010315645"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acs.nanolett.5b05066", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014587238"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl303583v", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015275735"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201104798", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016282353"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn400671z", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017728638"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1102896", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019008412"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2014.207", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022224835", 
          "https://doi.org/10.1038/nnano.2014.207"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2013.100", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023181230", 
          "https://doi.org/10.1038/nnano.2013.100"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3549183", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023411515"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/anie.201309280", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027672446"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl502603d", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029448130"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl3043079", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030573977"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201602889", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031293444"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn405834b", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031492038"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/srep05458", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034150059", 
          "https://doi.org/10.1038/srep05458"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl502570f", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035452336"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.ssc.2011.08.025", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037852983"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.3390/ma9090716", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038874741"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2016.07.008", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043716431"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn502362b", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045290404"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201604230", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045592944"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s12274-014-0656-z", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047632062", 
          "https://doi.org/10.1007/s12274-014-0656-z"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2010.279", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047704758", 
          "https://doi.org/10.1038/nnano.2010.279"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn400971k", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049171177"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nchem.1589", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050119463", 
          "https://doi.org/10.1038/nchem.1589"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4804643", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050339255"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.81.109", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050408744"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.81.109", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050408744"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.apsusc.2014.01.103", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052645144"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl2018178", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053218712"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl2018178", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053218712"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acs.nanolett.5b00964", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055120675"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acsnano.6b04898", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055138158"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acsnano.6b04898", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055138158"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp405808a", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056096138"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp806437y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056110148"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp806437y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056110148"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/ip-i-1.1982.0001", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056854992"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3646506", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057991231"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0022-3719/19/7/011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058963531"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/2053-1583/3/2/021004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1059182840"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.902741", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061097398"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/edl.1982.25502", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061258880"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/jstqe.2012.2209865", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061336534"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2005.854287", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061591777"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2005.854287", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061591777"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.nanoen.2017.10.038", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1092270619"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/essderc.2016.7599629", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1094923315"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-12", 
    "datePublishedReg": "2018-12-01", 
    "description": "Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness-dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization in field-effect devices. Finally, the influence of edge contacts at the metal\u2013PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps toward realizing high-performance nanoelectronic devices based on group-10 TMDs. Transport measurements on channels of layered PtSe2 give insight into the realization of high-performance nanoelectronic PtSe2 devices. A team led by Niall McEvoy at Trinity College Dublin investigated the electrical contact properties of PtSe2 channels with controlled dimensions and thicknesses. Electron beam lithography was used to fabricate structures with different contact metals and different PtSe2 film thicknesses, and the corresponding contact resistivity and sheet resistance of the PtSe2 devices were extracted from transmission line method measurements. The charge-transport characteristics of the PtSe2 devices revealed that edge-contacted structures are able reduce the contact resistivity when compared to conventional devices with top contacts, thanks to enhancement of the carrier injection at the contacts. These results may pave the way to optimal design of PtSe2 nanoelectronic devices.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1038/s41699-018-0051-9", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.7668804", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.3799025", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.3984105", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.7670258", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1290452", 
        "issn": [
          "2397-7132"
        ], 
        "name": "npj 2D Materials and Applications", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "2"
      }
    ], 
    "name": "Electrical devices from top-down structured platinum diselenide films", 
    "pagination": "5", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "635390a96a5dceff2134707de3210a64c39130e39a597c5dc219898d122b16d2"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1038/s41699-018-0051-9"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1101191590"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1038/s41699-018-0051-9", 
      "https://app.dimensions.ai/details/publication/pub.1101191590"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T10:38", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000349_0000000349/records_113676_00000004.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://www.nature.com/articles/s41699-018-0051-9"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

283 TRIPLES      21 PREDICATES      75 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1038/s41699-018-0051-9 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nf32a60b2d08649d092e179d5167a369b
4 schema:citation sg:pub.10.1007/s12274-014-0656-z
5 sg:pub.10.1038/nchem.1589
6 sg:pub.10.1038/nmat4452
7 sg:pub.10.1038/nnano.2010.279
8 sg:pub.10.1038/nnano.2013.100
9 sg:pub.10.1038/nnano.2014.207
10 sg:pub.10.1038/nnano.2014.215
11 sg:pub.10.1038/srep05458
12 sg:pub.10.1038/srep30084
13 https://doi.org/10.1002/adma.201104798
14 https://doi.org/10.1002/adma.201303230
15 https://doi.org/10.1002/adma.201602889
16 https://doi.org/10.1002/adma.201604230
17 https://doi.org/10.1002/anie.201309280
18 https://doi.org/10.1016/j.apsusc.2014.01.103
19 https://doi.org/10.1016/j.nanoen.2017.10.038
20 https://doi.org/10.1016/j.ssc.2011.08.025
21 https://doi.org/10.1016/j.sse.2016.07.008
22 https://doi.org/10.1021/acs.nanolett.5b00964
23 https://doi.org/10.1021/acs.nanolett.5b05066
24 https://doi.org/10.1021/acsnano.5b00985
25 https://doi.org/10.1021/acsnano.6b04898
26 https://doi.org/10.1021/jp405808a
27 https://doi.org/10.1021/jp806437y
28 https://doi.org/10.1021/nl2018178
29 https://doi.org/10.1021/nl303583v
30 https://doi.org/10.1021/nl3043079
31 https://doi.org/10.1021/nl502570f
32 https://doi.org/10.1021/nl502603d
33 https://doi.org/10.1021/nn400671z
34 https://doi.org/10.1021/nn400971k
35 https://doi.org/10.1021/nn405834b
36 https://doi.org/10.1021/nn502362b
37 https://doi.org/10.1049/ip-i-1.1982.0001
38 https://doi.org/10.1063/1.3549183
39 https://doi.org/10.1063/1.3646506
40 https://doi.org/10.1063/1.4804643
41 https://doi.org/10.1063/1.4898584
42 https://doi.org/10.1088/0022-3719/19/7/011
43 https://doi.org/10.1088/2053-1583/3/2/021004
44 https://doi.org/10.1103/revmodphys.81.109
45 https://doi.org/10.1109/16.902741
46 https://doi.org/10.1109/edl.1982.25502
47 https://doi.org/10.1109/essderc.2016.7599629
48 https://doi.org/10.1109/jstqe.2012.2209865
49 https://doi.org/10.1109/ted.2005.854287
50 https://doi.org/10.1126/science.1102896
51 https://doi.org/10.3390/ma9090716
52 schema:datePublished 2018-12
53 schema:datePublishedReg 2018-12-01
54 schema:description Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness-dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization in field-effect devices. Finally, the influence of edge contacts at the metal–PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps toward realizing high-performance nanoelectronic devices based on group-10 TMDs. Transport measurements on channels of layered PtSe2 give insight into the realization of high-performance nanoelectronic PtSe2 devices. A team led by Niall McEvoy at Trinity College Dublin investigated the electrical contact properties of PtSe2 channels with controlled dimensions and thicknesses. Electron beam lithography was used to fabricate structures with different contact metals and different PtSe2 film thicknesses, and the corresponding contact resistivity and sheet resistance of the PtSe2 devices were extracted from transmission line method measurements. The charge-transport characteristics of the PtSe2 devices revealed that edge-contacted structures are able reduce the contact resistivity when compared to conventional devices with top contacts, thanks to enhancement of the carrier injection at the contacts. These results may pave the way to optimal design of PtSe2 nanoelectronic devices.
55 schema:genre research_article
56 schema:inLanguage en
57 schema:isAccessibleForFree true
58 schema:isPartOf N288ace7e436f47579254716a35cd1974
59 N6d11c5f0de17414a8b84a65537374e29
60 sg:journal.1290452
61 schema:name Electrical devices from top-down structured platinum diselenide films
62 schema:pagination 5
63 schema:productId N262d8a09f0634a859485a383ae5038d2
64 Naf90111c802342ffa059f06091c2c508
65 Nb8dc110b46e34f7bb20ef82fc7c143a0
66 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101191590
67 https://doi.org/10.1038/s41699-018-0051-9
68 schema:sdDatePublished 2019-04-11T10:38
69 schema:sdLicense https://scigraph.springernature.com/explorer/license/
70 schema:sdPublisher N9dd1e74e36cd40a1a08c7e0a06b0a88b
71 schema:url https://www.nature.com/articles/s41699-018-0051-9
72 sgo:license sg:explorer/license/
73 sgo:sdDataset articles
74 rdf:type schema:ScholarlyArticle
75 N101eb60b8de44ca095c588c377988fd9 rdf:first sg:person.013025013425.44
76 rdf:rest N6a994e9a2e8748b8b7d6fcac86063367
77 N260f89af9f284c438a0e518d31859581 rdf:first sg:person.012172000542.55
78 rdf:rest Nb9179ef238844b5fbadf9fb48d2fc82f
79 N262d8a09f0634a859485a383ae5038d2 schema:name dimensions_id
80 schema:value pub.1101191590
81 rdf:type schema:PropertyValue
82 N288ace7e436f47579254716a35cd1974 schema:volumeNumber 2
83 rdf:type schema:PublicationVolume
84 N3fac94675d734024acb1122329c5fc7d rdf:first sg:person.01130153524.29
85 rdf:rest N260f89af9f284c438a0e518d31859581
86 N63a1fc1958314d88985804da95a8326b rdf:first sg:person.0736050601.55
87 rdf:rest N7174e57552b643e58fa954cd8578bb7e
88 N6a994e9a2e8748b8b7d6fcac86063367 rdf:first sg:person.01202416450.19
89 rdf:rest N63a1fc1958314d88985804da95a8326b
90 N6d11c5f0de17414a8b84a65537374e29 schema:issueNumber 1
91 rdf:type schema:PublicationIssue
92 N7174e57552b643e58fa954cd8578bb7e rdf:first sg:person.016420015067.50
93 rdf:rest N3fac94675d734024acb1122329c5fc7d
94 N9dd1e74e36cd40a1a08c7e0a06b0a88b schema:name Springer Nature - SN SciGraph project
95 rdf:type schema:Organization
96 Naf90111c802342ffa059f06091c2c508 schema:name doi
97 schema:value 10.1038/s41699-018-0051-9
98 rdf:type schema:PropertyValue
99 Nb8dc110b46e34f7bb20ef82fc7c143a0 schema:name readcube_id
100 schema:value 635390a96a5dceff2134707de3210a64c39130e39a597c5dc219898d122b16d2
101 rdf:type schema:PropertyValue
102 Nb9179ef238844b5fbadf9fb48d2fc82f rdf:first sg:person.01302757460.19
103 rdf:rest rdf:nil
104 Nf32a60b2d08649d092e179d5167a369b rdf:first sg:person.01210226513.74
105 rdf:rest N101eb60b8de44ca095c588c377988fd9
106 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
107 schema:name Engineering
108 rdf:type schema:DefinedTerm
109 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
110 schema:name Materials Engineering
111 rdf:type schema:DefinedTerm
112 sg:grant.3799025 http://pending.schema.org/fundedItem sg:pub.10.1038/s41699-018-0051-9
113 rdf:type schema:MonetaryGrant
114 sg:grant.3984105 http://pending.schema.org/fundedItem sg:pub.10.1038/s41699-018-0051-9
115 rdf:type schema:MonetaryGrant
116 sg:grant.7668804 http://pending.schema.org/fundedItem sg:pub.10.1038/s41699-018-0051-9
117 rdf:type schema:MonetaryGrant
118 sg:grant.7670258 http://pending.schema.org/fundedItem sg:pub.10.1038/s41699-018-0051-9
119 rdf:type schema:MonetaryGrant
120 sg:journal.1290452 schema:issn 2397-7132
121 schema:name npj 2D Materials and Applications
122 rdf:type schema:Periodical
123 sg:person.01130153524.29 schema:affiliation https://www.grid.ac/institutes/grid.461903.9
124 schema:familyName Pallecchi
125 schema:givenName Emiliano
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01130153524.29
127 rdf:type schema:Person
128 sg:person.01202416450.19 schema:affiliation https://www.grid.ac/institutes/grid.1957.a
129 schema:familyName Lemme
130 schema:givenName Max C.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01202416450.19
132 rdf:type schema:Person
133 sg:person.01210226513.74 schema:affiliation https://www.grid.ac/institutes/grid.7752.7
134 schema:familyName Yim
135 schema:givenName Chanyoung
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01210226513.74
137 rdf:type schema:Person
138 sg:person.012172000542.55 schema:affiliation https://www.grid.ac/institutes/grid.461903.9
139 schema:familyName Fadil
140 schema:givenName Dalal
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012172000542.55
142 rdf:type schema:Person
143 sg:person.013025013425.44 schema:affiliation https://www.grid.ac/institutes/grid.1957.a
144 schema:familyName Passi
145 schema:givenName Vikram
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013025013425.44
147 rdf:type schema:Person
148 sg:person.01302757460.19 schema:affiliation https://www.grid.ac/institutes/grid.8217.c
149 schema:familyName McEvoy
150 schema:givenName Niall
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01302757460.19
152 rdf:type schema:Person
153 sg:person.016420015067.50 schema:affiliation https://www.grid.ac/institutes/grid.8217.c
154 schema:familyName Coileáin
155 schema:givenName Cormac Ó
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016420015067.50
157 rdf:type schema:Person
158 sg:person.0736050601.55 schema:affiliation https://www.grid.ac/institutes/grid.8217.c
159 schema:familyName Duesberg
160 schema:givenName Georg S.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0736050601.55
162 rdf:type schema:Person
163 sg:pub.10.1007/s12274-014-0656-z schema:sameAs https://app.dimensions.ai/details/publication/pub.1047632062
164 https://doi.org/10.1007/s12274-014-0656-z
165 rdf:type schema:CreativeWork
166 sg:pub.10.1038/nchem.1589 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050119463
167 https://doi.org/10.1038/nchem.1589
168 rdf:type schema:CreativeWork
169 sg:pub.10.1038/nmat4452 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003479312
170 https://doi.org/10.1038/nmat4452
171 rdf:type schema:CreativeWork
172 sg:pub.10.1038/nnano.2010.279 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047704758
173 https://doi.org/10.1038/nnano.2010.279
174 rdf:type schema:CreativeWork
175 sg:pub.10.1038/nnano.2013.100 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023181230
176 https://doi.org/10.1038/nnano.2013.100
177 rdf:type schema:CreativeWork
178 sg:pub.10.1038/nnano.2014.207 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022224835
179 https://doi.org/10.1038/nnano.2014.207
180 rdf:type schema:CreativeWork
181 sg:pub.10.1038/nnano.2014.215 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008640603
182 https://doi.org/10.1038/nnano.2014.215
183 rdf:type schema:CreativeWork
184 sg:pub.10.1038/srep05458 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034150059
185 https://doi.org/10.1038/srep05458
186 rdf:type schema:CreativeWork
187 sg:pub.10.1038/srep30084 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003447881
188 https://doi.org/10.1038/srep30084
189 rdf:type schema:CreativeWork
190 https://doi.org/10.1002/adma.201104798 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016282353
191 rdf:type schema:CreativeWork
192 https://doi.org/10.1002/adma.201303230 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009589898
193 rdf:type schema:CreativeWork
194 https://doi.org/10.1002/adma.201602889 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031293444
195 rdf:type schema:CreativeWork
196 https://doi.org/10.1002/adma.201604230 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045592944
197 rdf:type schema:CreativeWork
198 https://doi.org/10.1002/anie.201309280 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027672446
199 rdf:type schema:CreativeWork
200 https://doi.org/10.1016/j.apsusc.2014.01.103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052645144
201 rdf:type schema:CreativeWork
202 https://doi.org/10.1016/j.nanoen.2017.10.038 schema:sameAs https://app.dimensions.ai/details/publication/pub.1092270619
203 rdf:type schema:CreativeWork
204 https://doi.org/10.1016/j.ssc.2011.08.025 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037852983
205 rdf:type schema:CreativeWork
206 https://doi.org/10.1016/j.sse.2016.07.008 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043716431
207 rdf:type schema:CreativeWork
208 https://doi.org/10.1021/acs.nanolett.5b00964 schema:sameAs https://app.dimensions.ai/details/publication/pub.1055120675
209 rdf:type schema:CreativeWork
210 https://doi.org/10.1021/acs.nanolett.5b05066 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014587238
211 rdf:type schema:CreativeWork
212 https://doi.org/10.1021/acsnano.5b00985 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010315645
213 rdf:type schema:CreativeWork
214 https://doi.org/10.1021/acsnano.6b04898 schema:sameAs https://app.dimensions.ai/details/publication/pub.1055138158
215 rdf:type schema:CreativeWork
216 https://doi.org/10.1021/jp405808a schema:sameAs https://app.dimensions.ai/details/publication/pub.1056096138
217 rdf:type schema:CreativeWork
218 https://doi.org/10.1021/jp806437y schema:sameAs https://app.dimensions.ai/details/publication/pub.1056110148
219 rdf:type schema:CreativeWork
220 https://doi.org/10.1021/nl2018178 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053218712
221 rdf:type schema:CreativeWork
222 https://doi.org/10.1021/nl303583v schema:sameAs https://app.dimensions.ai/details/publication/pub.1015275735
223 rdf:type schema:CreativeWork
224 https://doi.org/10.1021/nl3043079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030573977
225 rdf:type schema:CreativeWork
226 https://doi.org/10.1021/nl502570f schema:sameAs https://app.dimensions.ai/details/publication/pub.1035452336
227 rdf:type schema:CreativeWork
228 https://doi.org/10.1021/nl502603d schema:sameAs https://app.dimensions.ai/details/publication/pub.1029448130
229 rdf:type schema:CreativeWork
230 https://doi.org/10.1021/nn400671z schema:sameAs https://app.dimensions.ai/details/publication/pub.1017728638
231 rdf:type schema:CreativeWork
232 https://doi.org/10.1021/nn400971k schema:sameAs https://app.dimensions.ai/details/publication/pub.1049171177
233 rdf:type schema:CreativeWork
234 https://doi.org/10.1021/nn405834b schema:sameAs https://app.dimensions.ai/details/publication/pub.1031492038
235 rdf:type schema:CreativeWork
236 https://doi.org/10.1021/nn502362b schema:sameAs https://app.dimensions.ai/details/publication/pub.1045290404
237 rdf:type schema:CreativeWork
238 https://doi.org/10.1049/ip-i-1.1982.0001 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056854992
239 rdf:type schema:CreativeWork
240 https://doi.org/10.1063/1.3549183 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023411515
241 rdf:type schema:CreativeWork
242 https://doi.org/10.1063/1.3646506 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057991231
243 rdf:type schema:CreativeWork
244 https://doi.org/10.1063/1.4804643 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050339255
245 rdf:type schema:CreativeWork
246 https://doi.org/10.1063/1.4898584 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000498297
247 rdf:type schema:CreativeWork
248 https://doi.org/10.1088/0022-3719/19/7/011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058963531
249 rdf:type schema:CreativeWork
250 https://doi.org/10.1088/2053-1583/3/2/021004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1059182840
251 rdf:type schema:CreativeWork
252 https://doi.org/10.1103/revmodphys.81.109 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050408744
253 rdf:type schema:CreativeWork
254 https://doi.org/10.1109/16.902741 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061097398
255 rdf:type schema:CreativeWork
256 https://doi.org/10.1109/edl.1982.25502 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061258880
257 rdf:type schema:CreativeWork
258 https://doi.org/10.1109/essderc.2016.7599629 schema:sameAs https://app.dimensions.ai/details/publication/pub.1094923315
259 rdf:type schema:CreativeWork
260 https://doi.org/10.1109/jstqe.2012.2209865 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061336534
261 rdf:type schema:CreativeWork
262 https://doi.org/10.1109/ted.2005.854287 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061591777
263 rdf:type schema:CreativeWork
264 https://doi.org/10.1126/science.1102896 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019008412
265 rdf:type schema:CreativeWork
266 https://doi.org/10.3390/ma9090716 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038874741
267 rdf:type schema:CreativeWork
268 https://www.grid.ac/institutes/grid.1957.a schema:alternateName RWTH Aachen University
269 schema:name Department of Electrical Engineering and Computer Science, University of Siegen, Hölderlinstraße 3, 57076, Siegen, Germany
270 Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
271 rdf:type schema:Organization
272 https://www.grid.ac/institutes/grid.461903.9 schema:alternateName Institute of Electronics, Microelectronics and Nanotechnology
273 schema:name Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), 59652, Villeneuve d’Ascq, France
274 rdf:type schema:Organization
275 https://www.grid.ac/institutes/grid.7752.7 schema:alternateName Bundeswehr University Munich
276 schema:name Department of Electrical Engineering and Computer Science, University of Siegen, Hölderlinstraße 3, 57076, Siegen, Germany
277 Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577, Neubiberg, Germany
278 rdf:type schema:Organization
279 https://www.grid.ac/institutes/grid.8217.c schema:alternateName Trinity College Dublin
280 schema:name Centre for the Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland
281 Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577, Neubiberg, Germany
282 School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
283 rdf:type schema:Organization
 




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