Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration View Full Text


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Article Info

DATE

2019-10-01

AUTHORS

Timothy D. Eales, Igor P. Marko, Stefan Schulz, Edmond O’Halloran, Seyed Ghetmiri, Wei Du, Yiyin Zhou, Shui-Qing Yu, Joe Margetis, John Tolle, Eoin P. O’Reilly, Stephen J. Sweeney

ABSTRACT

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1-xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems. More... »

PAGES

14077

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-019-50349-z

DOI

http://dx.doi.org/10.1038/s41598-019-50349-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1121403305

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/31575881


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