Ontology type: schema:ScholarlyArticle Open Access: True
2019-12
AUTHORSQi Hu, Runmiao Li, Xinjiang Zhang, Qin Gao, Mei Wang, Hongliang Shi, Zhisong Xiao, Paul K. Chu, Anping Huang
ABSTRACTPt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors. More... »
PAGES5081
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DOIhttp://dx.doi.org/10.1038/s41598-019-41508-3
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