Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Jiao Fu, Tianfei Zhu, Yan Liang, Zhangcheng Liu, Ruozheng Wang, Xiaofan Zhang, Hong-Xing Wang

ABSTRACT

Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods. Furthermore, the displacements of cantilever beam under different pressure conditions were investigated by atomic force microscopy. The capacitance-voltage curves of single crystal diamond cantilever beam and substrate under different force loading conditions were measured by using Agilent B1505A parameter analyzer. The results show that sensitivity increases with the enlargement of electrode area of cantilever beam, and decreases with the rise of measurement frequency. More... »

PAGES

4699

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-019-40582-x

DOI

http://dx.doi.org/10.1038/s41598-019-40582-x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112855628

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30886167


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0306", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Chemistry (incl. Structural)", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/03", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Chemical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fu", 
        "givenName": "Jiao", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhu", 
        "givenName": "Tianfei", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liang", 
        "givenName": "Yan", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liu", 
        "givenName": "Zhangcheng", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Wang", 
        "givenName": "Ruozheng", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Xiaofan", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Xi'an Jiaotong University", 
          "id": "https://www.grid.ac/institutes/grid.43169.39", 
          "name": [
            "Institute of Wide Band Gap Semiconductors, Xi\u2019an Jiaotong University, Xi\u2019an, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Wang", 
        "givenName": "Hong-Xing", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.diamond.2015.11.015", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010143857"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.200500752", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019021700"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.200500752", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019021700"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.200500752", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019021700"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-9635(96)00724-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028982307"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.diamond.2016.10.011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035471810"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0964-1726/6/5/004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040979392"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.diamond.2003.10.017", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042693895"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sna.2007.09.015", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047022937"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-9635(00)00298-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052487930"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.107981", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057655550"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4868720", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058091238"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1074374", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062446773"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1154949", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062457531"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/srep44462", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084132352", 
          "https://doi.org/10.1038/srep44462"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12", 
    "datePublishedReg": "2019-12-01", 
    "description": "Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods. Furthermore, the displacements of cantilever beam under different pressure conditions were investigated by atomic force microscopy. The capacitance-voltage curves of single crystal diamond cantilever beam and substrate under different force loading conditions were measured by using Agilent B1505A parameter analyzer. The results show that sensitivity increases with the enlargement of electrode area of cantilever beam, and decreases with the rise of measurement frequency.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1038/s41598-019-40582-x", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1045337", 
        "issn": [
          "2045-2322"
        ], 
        "name": "Scientific Reports", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "9"
      }
    ], 
    "name": "Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam", 
    "pagination": "4699", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "a281af811f25e1db50bd8b91b4f114a8534dbbe654750780ee6de609d6a76880"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "30886167"
        ]
      }, 
      {
        "name": "nlm_unique_id", 
        "type": "PropertyValue", 
        "value": [
          "101563288"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1038/s41598-019-40582-x"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112855628"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1038/s41598-019-40582-x", 
      "https://app.dimensions.ai/details/publication/pub.1112855628"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T13:17", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000368_0000000368/records_78935_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://www.nature.com/articles/s41598-019-40582-x"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1038/s41598-019-40582-x'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1038/s41598-019-40582-x'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1038/s41598-019-40582-x'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1038/s41598-019-40582-x'


 

This table displays all metadata directly associated to this object as RDF triples.

143 TRIPLES      21 PREDICATES      42 URIs      21 LITERALS      9 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1038/s41598-019-40582-x schema:about anzsrc-for:03
2 anzsrc-for:0306
3 schema:author N2b8616af626044e7a84f8e17d7c6c216
4 schema:citation sg:pub.10.1038/srep44462
5 https://doi.org/10.1002/adma.200500752
6 https://doi.org/10.1016/j.diamond.2003.10.017
7 https://doi.org/10.1016/j.diamond.2015.11.015
8 https://doi.org/10.1016/j.diamond.2016.10.011
9 https://doi.org/10.1016/j.sna.2007.09.015
10 https://doi.org/10.1016/s0925-9635(00)00298-3
11 https://doi.org/10.1016/s0925-9635(96)00724-8
12 https://doi.org/10.1063/1.107981
13 https://doi.org/10.1063/1.4868720
14 https://doi.org/10.1088/0964-1726/6/5/004
15 https://doi.org/10.1126/science.1074374
16 https://doi.org/10.1126/science.1154949
17 schema:datePublished 2019-12
18 schema:datePublishedReg 2019-12-01
19 schema:description Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods. Furthermore, the displacements of cantilever beam under different pressure conditions were investigated by atomic force microscopy. The capacitance-voltage curves of single crystal diamond cantilever beam and substrate under different force loading conditions were measured by using Agilent B1505A parameter analyzer. The results show that sensitivity increases with the enlargement of electrode area of cantilever beam, and decreases with the rise of measurement frequency.
20 schema:genre research_article
21 schema:inLanguage en
22 schema:isAccessibleForFree true
23 schema:isPartOf N6ce65742989a464090b4aaaf7e845e7c
24 Na726dbdc79114ab2bdc9d205b1ab760e
25 sg:journal.1045337
26 schema:name Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam
27 schema:pagination 4699
28 schema:productId N3a4dba0ae0774e249caec7d82514dcc6
29 N4a272aa6dab0491087ae4ecfea8dd280
30 N4fb6b671d43947e08e633f46f8e95293
31 N8f1065905db240a0ae3ba601dc8039c9
32 Nab73a3a27e094fa8856cf5ab5f707b2c
33 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112855628
34 https://doi.org/10.1038/s41598-019-40582-x
35 schema:sdDatePublished 2019-04-11T13:17
36 schema:sdLicense https://scigraph.springernature.com/explorer/license/
37 schema:sdPublisher Nff7dc8abb75c45268f536f4a3c9af5d8
38 schema:url https://www.nature.com/articles/s41598-019-40582-x
39 sgo:license sg:explorer/license/
40 sgo:sdDataset articles
41 rdf:type schema:ScholarlyArticle
42 N02141238d48a4f8c8a07ced3780d7919 schema:affiliation https://www.grid.ac/institutes/grid.43169.39
43 schema:familyName Zhang
44 schema:givenName Xiaofan
45 rdf:type schema:Person
46 N216a9fa69e53406f90af8b4e29e63cbd schema:affiliation https://www.grid.ac/institutes/grid.43169.39
47 schema:familyName Liang
48 schema:givenName Yan
49 rdf:type schema:Person
50 N242dd57378b24afe978d39c95a35a8ad rdf:first N216a9fa69e53406f90af8b4e29e63cbd
51 rdf:rest Nad60c8b5dd8043839507280315bbbdf6
52 N2b8616af626044e7a84f8e17d7c6c216 rdf:first Nfed3c4db934d42bea978d843abdf3d02
53 rdf:rest Nbc2fbf3c6b924b83814638e7394ed98c
54 N30b876a57dd64ef1b3b5063f96a4ff6b rdf:first N02141238d48a4f8c8a07ced3780d7919
55 rdf:rest N5d9b7193e9e24be28fffb04b79f2fd4d
56 N3a4dba0ae0774e249caec7d82514dcc6 schema:name doi
57 schema:value 10.1038/s41598-019-40582-x
58 rdf:type schema:PropertyValue
59 N455f806657f84794930326c0504184de schema:affiliation https://www.grid.ac/institutes/grid.43169.39
60 schema:familyName Wang
61 schema:givenName Hong-Xing
62 rdf:type schema:Person
63 N4a272aa6dab0491087ae4ecfea8dd280 schema:name dimensions_id
64 schema:value pub.1112855628
65 rdf:type schema:PropertyValue
66 N4fb6b671d43947e08e633f46f8e95293 schema:name readcube_id
67 schema:value a281af811f25e1db50bd8b91b4f114a8534dbbe654750780ee6de609d6a76880
68 rdf:type schema:PropertyValue
69 N5d9b7193e9e24be28fffb04b79f2fd4d rdf:first N455f806657f84794930326c0504184de
70 rdf:rest rdf:nil
71 N6ce65742989a464090b4aaaf7e845e7c schema:issueNumber 1
72 rdf:type schema:PublicationIssue
73 N8d2ea02ad5fa432e89e1b43bab376584 rdf:first Ne3c8d4d346074c2c8b9bde107ccaadcc
74 rdf:rest N30b876a57dd64ef1b3b5063f96a4ff6b
75 N8f1065905db240a0ae3ba601dc8039c9 schema:name pubmed_id
76 schema:value 30886167
77 rdf:type schema:PropertyValue
78 Na726dbdc79114ab2bdc9d205b1ab760e schema:volumeNumber 9
79 rdf:type schema:PublicationVolume
80 Nab73a3a27e094fa8856cf5ab5f707b2c schema:name nlm_unique_id
81 schema:value 101563288
82 rdf:type schema:PropertyValue
83 Nad60c8b5dd8043839507280315bbbdf6 rdf:first Nb4c122329768456ab06a246ae6bc9622
84 rdf:rest N8d2ea02ad5fa432e89e1b43bab376584
85 Nb4c122329768456ab06a246ae6bc9622 schema:affiliation https://www.grid.ac/institutes/grid.43169.39
86 schema:familyName Liu
87 schema:givenName Zhangcheng
88 rdf:type schema:Person
89 Nbc2fbf3c6b924b83814638e7394ed98c rdf:first Ne0cee5ca797f4610ad608cf28a52b55e
90 rdf:rest N242dd57378b24afe978d39c95a35a8ad
91 Ne0cee5ca797f4610ad608cf28a52b55e schema:affiliation https://www.grid.ac/institutes/grid.43169.39
92 schema:familyName Zhu
93 schema:givenName Tianfei
94 rdf:type schema:Person
95 Ne3c8d4d346074c2c8b9bde107ccaadcc schema:affiliation https://www.grid.ac/institutes/grid.43169.39
96 schema:familyName Wang
97 schema:givenName Ruozheng
98 rdf:type schema:Person
99 Nfed3c4db934d42bea978d843abdf3d02 schema:affiliation https://www.grid.ac/institutes/grid.43169.39
100 schema:familyName Fu
101 schema:givenName Jiao
102 rdf:type schema:Person
103 Nff7dc8abb75c45268f536f4a3c9af5d8 schema:name Springer Nature - SN SciGraph project
104 rdf:type schema:Organization
105 anzsrc-for:03 schema:inDefinedTermSet anzsrc-for:
106 schema:name Chemical Sciences
107 rdf:type schema:DefinedTerm
108 anzsrc-for:0306 schema:inDefinedTermSet anzsrc-for:
109 schema:name Physical Chemistry (incl. Structural)
110 rdf:type schema:DefinedTerm
111 sg:journal.1045337 schema:issn 2045-2322
112 schema:name Scientific Reports
113 rdf:type schema:Periodical
114 sg:pub.10.1038/srep44462 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084132352
115 https://doi.org/10.1038/srep44462
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1002/adma.200500752 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019021700
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1016/j.diamond.2003.10.017 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042693895
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1016/j.diamond.2015.11.015 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010143857
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1016/j.diamond.2016.10.011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035471810
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1016/j.sna.2007.09.015 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047022937
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1016/s0925-9635(00)00298-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052487930
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/s0925-9635(96)00724-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028982307
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1063/1.107981 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057655550
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1063/1.4868720 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058091238
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1088/0964-1726/6/5/004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040979392
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1126/science.1074374 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062446773
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1126/science.1154949 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062457531
140 rdf:type schema:CreativeWork
141 https://www.grid.ac/institutes/grid.43169.39 schema:alternateName Xi'an Jiaotong University
142 schema:name Institute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an, China
143 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...