A bismuth triiodide monosheet on Bi2Se3(0001) View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Andrey Polyakov, Katayoon Mohseni, German R. Castro, Juan Rubio-Zuazo, Alexander Zeugner, Anna Isaeva, Ying-Jiun Chen, Christian Tusche, Holger L. Meyerheim

ABSTRACT

A stable BiI3 monosheet has been grown for the first time on the (0001) surface of the topological insulator Bi2Se3 as confirmed by scanning tunnelling microscopy, surface X-ray diffraction, and X-ray photoemision spectroscopy. BiI3 is deposited by molecular beam epitaxy from the crystalline BiTeI precursor that undergoes decomposition sublimation. The key fragment of the bulk BiI3 structure, [Formula: see text][I-Bi-I] layer of edge-sharing BiI6 octahedra, is preserved in the ultra-thin film limit, but exhibits large atomic relaxations. The stacking sequence of the trilayers and alternations of the Bi-I distances in the monosheet are the same as in the bulk BiI3 structure. Momentum resolved photoemission spectroscopy indicates a direct band gap of 1.2 eV. The Dirac surface state is completely destroyed and a new flat band appears in the band gap of the BiI3 film that could be interpreted as an interface state. More... »

PAGES

4052

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-019-40506-9

DOI

http://dx.doi.org/10.1038/s41598-019-40506-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112674930

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30858434


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