Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

N. Vouroutzis, J. Stoemenos, N. Frangis, G. Z. Radnóczi, D. Knez, F. Hofer, B. Pécz

ABSTRACT

The growth of the poly-Si films was studied by Transmission Electron Microscopy (TEM) after Ni Metal Induced Lateral Crystallization (Ni-MILC) of amorphous Si films at 413 °C. Significant differences in the morphology and the mode of growth of the films were observed, in comparison to films grown at temperatures above 500 °C. It was shown that at 413 °C the Solid Phase Crystallization (SPC), which acts in parallel with the Ni-MILC process at temperatures above 500 °C is suppressed. The suppression of SPC results in substantial change in the mode of growth. The poly-Si film grown at 413 °C consists of whiskers, which can be classified into two categories. Those growing fast along the <111> direction, which were already observed in conventional Ni-MILC above 500 °C and whiskers grown along random crystallographic orientations having significantly slower growth rates. Because of the large difference in growth rates of the whiskers, significant orientation filtering due to growth-velocity competition is observed. The uniform poly-Si films consist of a mixture of fast <111> type whiskers and slow ones, grown in other orientations, resulting in a tweed-like structure. More... »

PAGES

2844

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-019-39503-9

DOI

http://dx.doi.org/10.1038/s41598-019-39503-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112389497

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30808923


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