Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Long Tao, Aleksei Anopchenko, Sudip Gurung, Jinqiannan Zhang, Ho Wai Howard Lee

ABSTRACT

We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits. More... »

PAGES

2789

Journal

TITLE

Scientific Reports

ISSUE

1

VOLUME

9

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-019-39047-y

DOI

http://dx.doi.org/10.1038/s41598-019-39047-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112388364

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30808945


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