Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Cho-Ying Lin, Chia-Hsiu Hsu, Yu-Zhang Huang, Shih-Ching Hsieh, Han-De Chen, Li Huang, Zhi-Quan Huang, Feng-Chuan Chuang, Deng-Sung Lin

ABSTRACT

Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the Si(111) surface. Deposition of 1.0-ML Bi on the In/Si(111)-(4 × 1) surface at room temperature results in Bi-terminated BiIn-(4 × 3) structures, which are stable up to ~300 °C annealing. By contrast, deposition of In on the β-Bi/Si(111)-(√3 × √3) surface at room temperature results in three dimensional (3D) In islands. In both cases, annealing at 460 °C results in the same In-terminated In0.75Bi/Si(111)-(2 × 2) surface. Our DFT calculations confirm that the surface energy of In-terminated In0.75Bi/Si(111)-(2 × 2) system is lower than that of Bi-terminated Bi0.75In/Si(111)-(2 × 2). These findings provide means for the control of the polarity of the MBE In-Bi atomically thick films. More... »

PAGES

756

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-018-37051-2

DOI

http://dx.doi.org/10.1038/s41598-018-37051-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1111641171

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30679630


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    "description": "Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the Si(111) surface. Deposition of 1.0-ML Bi on the In/Si(111)-(4\u2009\u00d7\u20091) surface at room temperature results in Bi-terminated BiIn-(4\u2009\u00d7\u20093) structures, which are stable up to ~300\u2009\u00b0C annealing. By contrast, deposition of In on the \u03b2-Bi/Si(111)-(\u221a3\u2009\u00d7\u2009\u221a3) surface at room temperature results in three dimensional (3D) In islands. In both cases, annealing at 460\u2009\u00b0C results in the same In-terminated In0.75Bi/Si(111)-(2\u2009\u00d7\u20092) surface. Our DFT calculations confirm that the surface energy of In-terminated In0.75Bi/Si(111)-(2\u2009\u00d7\u20092) system is lower than that of Bi-terminated Bi0.75In/Si(111)-(2\u2009\u00d7\u20092). These findings provide means for the control of the polarity of the MBE In-Bi atomically thick films.", 
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