Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-12

AUTHORS

Tatsushi Hamaguchi, Masayuki Tanaka, Jugo Mitomo, Hiroshi Nakajima, Masamichi Ito, Maho Ohara, Noriko Kobayashi, Kentaro Fujii, Hideki Watanabe, Susumu Satou, Rintaro Koda, Hironobu Narui

ABSTRACT

We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed monolithically on a GaN wafer. The output wavelength of the devices is 441-455 nm. The threshold current is 40 mA (Jth = 141 kA/cm2) under pulsed current injection (Wp = 100 ns; duty = 0.2%) at room temperature. We confirm the lateral optical confinement by recording near-field images and investigating the dependence of threshold current on aperture size. The beam profile can be fitted with a Gaussian having a theoretical standard deviation of σ = 0.723 µm, which is significantly smaller than previously reported values for GaN-VCSELs with plane mirrors. Lateral optical confinement with this structure theoretically allows aperture miniaturization to the diffraction limit, resulting in threshold currents far lower than sub-milliamperes. The proposed structure enabled GaN-based VCSELs to be constructed with cavities as long as 28.3 µm, which greatly simplifies the fabrication process owing to longitudinal mode spacings of less than a few nanometers and should help the implementation of these devices in practice. More... »

PAGES

10350

Journal

TITLE

Scientific Reports

ISSUE

1

VOLUME

8

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-018-28418-6

DOI

http://dx.doi.org/10.1038/s41598-018-28418-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1105348606

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29985414


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