Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate View Full Text


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Article Info

DATE

2018-12

AUTHORS

Shiho Kobayashi, Yuki Anno, Kuniharu Takei, Takayuki Arie, Seiji Akita

ABSTRACT

Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. To analyze the photoresponse, we formulate the charge accumulation process at the n-Si/graphene interface, where the tunneling process through the SiOx layer to graphene occurs along with recombination of the accumulated holes and the electrons in the graphene at the surface states on the SiOx layer. Numerical calculations show good qualitative agreement with the experimentally obtained results for the photoresponse of G-FET. More... »

PAGES

4811

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-018-22974-7

DOI

http://dx.doi.org/10.1038/s41598-018-22974-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101561310

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29556066


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Osaka Prefecture University", 
          "id": "https://www.grid.ac/institutes/grid.261455.1", 
          "name": [
            "Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kobayashi", 
        "givenName": "Shiho", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Osaka Prefecture University", 
          "id": "https://www.grid.ac/institutes/grid.261455.1", 
          "name": [
            "Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Anno", 
        "givenName": "Yuki", 
        "id": "sg:person.0750776545.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0750776545.37"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Osaka Prefecture University", 
          "id": "https://www.grid.ac/institutes/grid.261455.1", 
          "name": [
            "Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Takei", 
        "givenName": "Kuniharu", 
        "id": "sg:person.0640320377.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0640320377.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Osaka Prefecture University", 
          "id": "https://www.grid.ac/institutes/grid.261455.1", 
          "name": [
            "Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Arie", 
        "givenName": "Takayuki", 
        "id": "sg:person.01341607167.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01341607167.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Osaka Prefecture University", 
          "id": "https://www.grid.ac/institutes/grid.261455.1", 
          "name": [
            "Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Akita", 
        "givenName": "Seiji", 
        "id": "sg:person.013551524345.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013551524345.37"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/adma.201502292", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001079535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.spmi.2016.01.029", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003856807"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4804430", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006190779"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1171245", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006821145"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1171245", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006821145"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2009.177", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009742023", 
          "https://doi.org/10.1038/nnano.2009.177"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2009.177", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009742023", 
          "https://doi.org/10.1038/nnano.2009.177"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.200904383", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014546900"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/smll.201502336", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019197312"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/srep02707", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020700670", 
          "https://doi.org/10.1038/srep02707"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2768624", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021602424"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/advs.201600018", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027245324"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssr.201409210", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027404524"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201400349", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027512623"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl303682j", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029509166"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4905930", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033946903"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adom.201500560", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037910041"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.physrep.2015.10.003", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039781302"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn500508c", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045740884"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1039/c6nr02902g", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050112389"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat1849", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052791836", 
          "https://doi.org/10.1038/nmat1849"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/acsphotonics.6b00610", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055139079"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp509878m", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056103610"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl104364c", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056218412"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl104364c", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056218412"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl501735k", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056220848"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl505011f", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056221219"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn503484s", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056226210"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.327888", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057930332"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4931142", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058096364"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.104.666", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060418310"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.104.666", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060418310"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.109.272", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060420046"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.109.272", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060420046"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.71.622", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060453259"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.71.622", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060453259"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.168723", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061092839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/2053-1583/aa6aa0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084929297"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.3390/nano7070158", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1086373048"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/s41699-017-0016-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1087305695", 
          "https://doi.org/10.1038/s41699-017-0016-4"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-12", 
    "datePublishedReg": "2018-12-01", 
    "description": "Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. To analyze the photoresponse, we formulate the charge accumulation process at the n-Si/graphene interface, where the tunneling process through the SiOx layer to graphene occurs along with recombination of the accumulated holes and the electrons in the graphene at the surface states on the SiOx layer. Numerical calculations show good qualitative agreement with the experimentally obtained results for the photoresponse of G-FET.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1038/s41598-018-22974-7", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.5922488", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.5904393", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.6533974", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.6819433", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1045337", 
        "issn": [
          "2045-2322"
        ], 
        "name": "Scientific Reports", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "8"
      }
    ], 
    "name": "Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate", 
    "pagination": "4811", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "c3eadb681d0488e6b0a871bc1a8f81d91f5a75d6be8fce5a8d819c748d045c2b"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "29556066"
        ]
      }, 
      {
        "name": "nlm_unique_id", 
        "type": "PropertyValue", 
        "value": [
          "101563288"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1038/s41598-018-22974-7"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1101561310"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1038/s41598-018-22974-7", 
      "https://app.dimensions.ai/details/publication/pub.1101561310"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T12:28", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000362_0000000362/records_87119_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://www.nature.com/articles/s41598-018-22974-7"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

209 TRIPLES      21 PREDICATES      63 URIs      21 LITERALS      9 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1038/s41598-018-22974-7 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N604bb63fc5f949cebc4f7fc6218562d8
4 schema:citation sg:pub.10.1038/nmat1849
5 sg:pub.10.1038/nnano.2009.177
6 sg:pub.10.1038/s41699-017-0016-4
7 sg:pub.10.1038/srep02707
8 https://doi.org/10.1002/adma.200904383
9 https://doi.org/10.1002/adma.201400349
10 https://doi.org/10.1002/adma.201502292
11 https://doi.org/10.1002/adom.201500560
12 https://doi.org/10.1002/advs.201600018
13 https://doi.org/10.1002/pssr.201409210
14 https://doi.org/10.1002/smll.201502336
15 https://doi.org/10.1016/j.physrep.2015.10.003
16 https://doi.org/10.1016/j.spmi.2016.01.029
17 https://doi.org/10.1021/acsphotonics.6b00610
18 https://doi.org/10.1021/jp509878m
19 https://doi.org/10.1021/nl104364c
20 https://doi.org/10.1021/nl303682j
21 https://doi.org/10.1021/nl501735k
22 https://doi.org/10.1021/nl505011f
23 https://doi.org/10.1021/nn500508c
24 https://doi.org/10.1021/nn503484s
25 https://doi.org/10.1039/c6nr02902g
26 https://doi.org/10.1063/1.2768624
27 https://doi.org/10.1063/1.327888
28 https://doi.org/10.1063/1.4804430
29 https://doi.org/10.1063/1.4905930
30 https://doi.org/10.1063/1.4931142
31 https://doi.org/10.1088/2053-1583/aa6aa0
32 https://doi.org/10.1103/physrev.104.666
33 https://doi.org/10.1103/physrev.109.272
34 https://doi.org/10.1103/physrev.71.622
35 https://doi.org/10.1109/16.168723
36 https://doi.org/10.1126/science.1171245
37 https://doi.org/10.3390/nano7070158
38 schema:datePublished 2018-12
39 schema:datePublishedReg 2018-12-01
40 schema:description Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. To analyze the photoresponse, we formulate the charge accumulation process at the n-Si/graphene interface, where the tunneling process through the SiO<sub>x</sub> layer to graphene occurs along with recombination of the accumulated holes and the electrons in the graphene at the surface states on the SiO<sub>x</sub> layer. Numerical calculations show good qualitative agreement with the experimentally obtained results for the photoresponse of G-FET.
41 schema:genre research_article
42 schema:inLanguage en
43 schema:isAccessibleForFree true
44 schema:isPartOf Nae84bc7269c7461e86c71dc841ae6bea
45 Nc0ab8dbbd9224e29befb960ac89b371d
46 sg:journal.1045337
47 schema:name Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate
48 schema:pagination 4811
49 schema:productId N2552d3d1f696492fa51fe3442687847f
50 N7a9e291f11c743059d61650c63b63fd9
51 N8432c57032814f38981e6f0bfa8ec913
52 Nc8a500eb8abd4fe882d4a36140a8079d
53 Ndcb8cdea93e24ecbbed438a2cadaaf25
54 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101561310
55 https://doi.org/10.1038/s41598-018-22974-7
56 schema:sdDatePublished 2019-04-11T12:28
57 schema:sdLicense https://scigraph.springernature.com/explorer/license/
58 schema:sdPublisher N150f187d918e4887a010894b04955c89
59 schema:url https://www.nature.com/articles/s41598-018-22974-7
60 sgo:license sg:explorer/license/
61 sgo:sdDataset articles
62 rdf:type schema:ScholarlyArticle
63 N150f187d918e4887a010894b04955c89 schema:name Springer Nature - SN SciGraph project
64 rdf:type schema:Organization
65 N1acda02d77a044038e33a05d64182c5c rdf:first sg:person.0640320377.44
66 rdf:rest Nc239dd22df294a0d8a4017af7ade2a50
67 N2552d3d1f696492fa51fe3442687847f schema:name pubmed_id
68 schema:value 29556066
69 rdf:type schema:PropertyValue
70 N54c65126f2254863953fc5f0e7d7a279 schema:affiliation https://www.grid.ac/institutes/grid.261455.1
71 schema:familyName Kobayashi
72 schema:givenName Shiho
73 rdf:type schema:Person
74 N604bb63fc5f949cebc4f7fc6218562d8 rdf:first N54c65126f2254863953fc5f0e7d7a279
75 rdf:rest Ne997adc5691245a29ebb7e3745b86ab5
76 N7a9e291f11c743059d61650c63b63fd9 schema:name doi
77 schema:value 10.1038/s41598-018-22974-7
78 rdf:type schema:PropertyValue
79 N8432c57032814f38981e6f0bfa8ec913 schema:name readcube_id
80 schema:value c3eadb681d0488e6b0a871bc1a8f81d91f5a75d6be8fce5a8d819c748d045c2b
81 rdf:type schema:PropertyValue
82 Nae84bc7269c7461e86c71dc841ae6bea schema:issueNumber 1
83 rdf:type schema:PublicationIssue
84 Nc0ab8dbbd9224e29befb960ac89b371d schema:volumeNumber 8
85 rdf:type schema:PublicationVolume
86 Nc239dd22df294a0d8a4017af7ade2a50 rdf:first sg:person.01341607167.04
87 rdf:rest Ne52887deed694a7fbb9e06a95f6a6baf
88 Nc8a500eb8abd4fe882d4a36140a8079d schema:name dimensions_id
89 schema:value pub.1101561310
90 rdf:type schema:PropertyValue
91 Ndcb8cdea93e24ecbbed438a2cadaaf25 schema:name nlm_unique_id
92 schema:value 101563288
93 rdf:type schema:PropertyValue
94 Ne52887deed694a7fbb9e06a95f6a6baf rdf:first sg:person.013551524345.37
95 rdf:rest rdf:nil
96 Ne997adc5691245a29ebb7e3745b86ab5 rdf:first sg:person.0750776545.37
97 rdf:rest N1acda02d77a044038e33a05d64182c5c
98 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
99 schema:name Engineering
100 rdf:type schema:DefinedTerm
101 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
102 schema:name Materials Engineering
103 rdf:type schema:DefinedTerm
104 sg:grant.5904393 http://pending.schema.org/fundedItem sg:pub.10.1038/s41598-018-22974-7
105 rdf:type schema:MonetaryGrant
106 sg:grant.5922488 http://pending.schema.org/fundedItem sg:pub.10.1038/s41598-018-22974-7
107 rdf:type schema:MonetaryGrant
108 sg:grant.6533974 http://pending.schema.org/fundedItem sg:pub.10.1038/s41598-018-22974-7
109 rdf:type schema:MonetaryGrant
110 sg:grant.6819433 http://pending.schema.org/fundedItem sg:pub.10.1038/s41598-018-22974-7
111 rdf:type schema:MonetaryGrant
112 sg:journal.1045337 schema:issn 2045-2322
113 schema:name Scientific Reports
114 rdf:type schema:Periodical
115 sg:person.01341607167.04 schema:affiliation https://www.grid.ac/institutes/grid.261455.1
116 schema:familyName Arie
117 schema:givenName Takayuki
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01341607167.04
119 rdf:type schema:Person
120 sg:person.013551524345.37 schema:affiliation https://www.grid.ac/institutes/grid.261455.1
121 schema:familyName Akita
122 schema:givenName Seiji
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013551524345.37
124 rdf:type schema:Person
125 sg:person.0640320377.44 schema:affiliation https://www.grid.ac/institutes/grid.261455.1
126 schema:familyName Takei
127 schema:givenName Kuniharu
128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0640320377.44
129 rdf:type schema:Person
130 sg:person.0750776545.37 schema:affiliation https://www.grid.ac/institutes/grid.261455.1
131 schema:familyName Anno
132 schema:givenName Yuki
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0750776545.37
134 rdf:type schema:Person
135 sg:pub.10.1038/nmat1849 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052791836
136 https://doi.org/10.1038/nmat1849
137 rdf:type schema:CreativeWork
138 sg:pub.10.1038/nnano.2009.177 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009742023
139 https://doi.org/10.1038/nnano.2009.177
140 rdf:type schema:CreativeWork
141 sg:pub.10.1038/s41699-017-0016-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1087305695
142 https://doi.org/10.1038/s41699-017-0016-4
143 rdf:type schema:CreativeWork
144 sg:pub.10.1038/srep02707 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020700670
145 https://doi.org/10.1038/srep02707
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1002/adma.200904383 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014546900
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1002/adma.201400349 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027512623
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1002/adma.201502292 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001079535
152 rdf:type schema:CreativeWork
153 https://doi.org/10.1002/adom.201500560 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037910041
154 rdf:type schema:CreativeWork
155 https://doi.org/10.1002/advs.201600018 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027245324
156 rdf:type schema:CreativeWork
157 https://doi.org/10.1002/pssr.201409210 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027404524
158 rdf:type schema:CreativeWork
159 https://doi.org/10.1002/smll.201502336 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019197312
160 rdf:type schema:CreativeWork
161 https://doi.org/10.1016/j.physrep.2015.10.003 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039781302
162 rdf:type schema:CreativeWork
163 https://doi.org/10.1016/j.spmi.2016.01.029 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003856807
164 rdf:type schema:CreativeWork
165 https://doi.org/10.1021/acsphotonics.6b00610 schema:sameAs https://app.dimensions.ai/details/publication/pub.1055139079
166 rdf:type schema:CreativeWork
167 https://doi.org/10.1021/jp509878m schema:sameAs https://app.dimensions.ai/details/publication/pub.1056103610
168 rdf:type schema:CreativeWork
169 https://doi.org/10.1021/nl104364c schema:sameAs https://app.dimensions.ai/details/publication/pub.1056218412
170 rdf:type schema:CreativeWork
171 https://doi.org/10.1021/nl303682j schema:sameAs https://app.dimensions.ai/details/publication/pub.1029509166
172 rdf:type schema:CreativeWork
173 https://doi.org/10.1021/nl501735k schema:sameAs https://app.dimensions.ai/details/publication/pub.1056220848
174 rdf:type schema:CreativeWork
175 https://doi.org/10.1021/nl505011f schema:sameAs https://app.dimensions.ai/details/publication/pub.1056221219
176 rdf:type schema:CreativeWork
177 https://doi.org/10.1021/nn500508c schema:sameAs https://app.dimensions.ai/details/publication/pub.1045740884
178 rdf:type schema:CreativeWork
179 https://doi.org/10.1021/nn503484s schema:sameAs https://app.dimensions.ai/details/publication/pub.1056226210
180 rdf:type schema:CreativeWork
181 https://doi.org/10.1039/c6nr02902g schema:sameAs https://app.dimensions.ai/details/publication/pub.1050112389
182 rdf:type schema:CreativeWork
183 https://doi.org/10.1063/1.2768624 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021602424
184 rdf:type schema:CreativeWork
185 https://doi.org/10.1063/1.327888 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057930332
186 rdf:type schema:CreativeWork
187 https://doi.org/10.1063/1.4804430 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006190779
188 rdf:type schema:CreativeWork
189 https://doi.org/10.1063/1.4905930 schema:sameAs https://app.dimensions.ai/details/publication/pub.1033946903
190 rdf:type schema:CreativeWork
191 https://doi.org/10.1063/1.4931142 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058096364
192 rdf:type schema:CreativeWork
193 https://doi.org/10.1088/2053-1583/aa6aa0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084929297
194 rdf:type schema:CreativeWork
195 https://doi.org/10.1103/physrev.104.666 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060418310
196 rdf:type schema:CreativeWork
197 https://doi.org/10.1103/physrev.109.272 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060420046
198 rdf:type schema:CreativeWork
199 https://doi.org/10.1103/physrev.71.622 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060453259
200 rdf:type schema:CreativeWork
201 https://doi.org/10.1109/16.168723 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061092839
202 rdf:type schema:CreativeWork
203 https://doi.org/10.1126/science.1171245 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006821145
204 rdf:type schema:CreativeWork
205 https://doi.org/10.3390/nano7070158 schema:sameAs https://app.dimensions.ai/details/publication/pub.1086373048
206 rdf:type schema:CreativeWork
207 https://www.grid.ac/institutes/grid.261455.1 schema:alternateName Osaka Prefecture University
208 schema:name Department of Physics and Electronics, Osaka Prefecture University, 599-8531, Sakai, Japan
209 rdf:type schema:Organization
 




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