Nonlinear Properties of Ge-rich Si1−xGex Materials with Different Ge Concentrations View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-12

AUTHORS

Samuel Serna, Vladyslav Vakarin, Joan-Manel Ramirez, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Laurent Vivien, Giovanni Isella, Eric Cassan, Nicolas Dubreuil, Delphine Marris-Morini

ABSTRACT

Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si1-xGex alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si1-xGex alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si1-xGex waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges. More... »

PAGES

14692

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-017-15266-z

DOI

http://dx.doi.org/10.1038/s41598-017-15266-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092483351

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29116201


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