IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-12

AUTHORS

Sozo Yokogawa, Itaru Oshiyama, Harumi Ikeda, Yoshiki Ebiko, Tomoyuki Hirano, Suguru Saito, Takashi Oinoue, Yoshiya Hagimoto, Hayato Iwamoto

ABSTRACT

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations. More... »

PAGES

3832

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41598-017-04200-y

DOI

http://dx.doi.org/10.1038/s41598-017-04200-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1086000869

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/28630442


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