A graphene Zener–Klein transistor cooled by a hyperbolic substrate View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-01

AUTHORS

Wei Yang, Simon Berthou, Xiaobo Lu, Quentin Wilmart, Anne Denis, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Gwendal Fève, Jean-Marc Berroir, Guangyu Zhang, Christophe Voisin, Emmanuel Baudin, Bernard Plaçais

ABSTRACT

The engineering of cooling mechanisms is a bottleneck in nanoelectronics. Thermal exchanges in diffusive graphene are mostly driven by defect-assisted acoustic phonon scattering, but the case of high-mobility graphene on hexagonal boron nitride (hBN) is radically different, with a prominent contribution of remote phonons from the substrate. Bilayer graphene on a hBN transistor with a local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease in the carrier density and Zener-Klein tunnelling (ZKT) at high bias. Using noise thermometry, we show that the ZKT triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT transport and hyperbolic phonon polariton cooling renders graphene on BN transistors a valuable nanotechnology for power devices and RF electronics. More... »

PAGES

47-52

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41565-017-0007-9

DOI

http://dx.doi.org/10.1038/s41565-017-0007-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1093026961

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29180743


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