Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies View Full Text


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Article Info

DATE

2018-04

AUTHORS

Naresh B. Kotadiya, Hao Lu, Anirban Mondal, Yutaka Ie, Denis Andrienko, Paul W. M. Blom, Gert-Jan A. H. Wetzelaer

ABSTRACT

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV. More... »

PAGES

329-334

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41563-018-0022-8

DOI

http://dx.doi.org/10.1038/s41563-018-0022-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101086664

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29459747


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