Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient View Full Text


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Article Info

DATE

2021-07-27

AUTHORS

Zhenyi Zheng, Yue Zhang, Victor Lopez-Dominguez, Luis Sánchez-Tejerina, Jiacheng Shi, Xueqiang Feng, Lei Chen, Zilu Wang, Zhizhong Zhang, Kun Zhang, Bin Hong, Yong Xu, Youguang Zhang, Mario Carpentieri, Albert Fert, Giovanni Finocchio, Weisheng Zhao, Pedram Khalili Amiri

ABSTRACT

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design. More... »

PAGES

4555

References to SciGraph publications

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  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/s41467-021-24854-7

    DOI

    http://dx.doi.org/10.1038/s41467-021-24854-7

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1139964214

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/34315883


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    323 grid-institutes:grid.462731.5 schema:alternateName Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau, France
    324 schema:name Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China
    325 Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau, France
    326 rdf:type schema:Organization
    327 grid-institutes:grid.64939.31 schema:alternateName Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China
    328 School of Electronics and Information Engineering, Beihang University, Beijing, PR China
    329 schema:name Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA
    330 Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China
    331 School of Electronics and Information Engineering, Beihang University, Beijing, PR China
    332 rdf:type schema:Organization
     




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