On the degradation mechanisms of quantum-dot light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Song Chen, Weiran Cao, Taili Liu, Sai-Wing Tsang, Yixing Yang, Xiaolin Yan, Lei Qian

ABSTRACT

The operating lifetime of blue quantum-dot light-emitting diodes (QLED) is currently a short slab for this emerging display technology. To pinpoint the origin of device degradation, here we apply multiple techniques to monitor the electric-field distribution and space-charge accumulation across the multilayered structure before and after lifetime tests. Evident by charge-modulated electro-absorption and capacitance-voltage characteristics, the excited electrons in blue quantum dots (QD) are prone to cross the type II junction between the QD emission layer and the electron-transporting layer (ETL) due to the offset of conduction band minimum, leading to space-charge accumulation and operating-voltage rise in the ETL. Therefore, unlike those very stable red devices, of which the lifetime is primarily limited by the slow degradation of hole-transporting layer, the poor lifetime of blue QLED originates from the fast degradation at the QD-ETL junction. Materials engineering for efficient electron injection is prerequisite for the boost of operating lifetime. More... »

PAGES

765

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41467-019-08749-2

DOI

http://dx.doi.org/10.1038/s41467-019-08749-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112165498

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30770861


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