Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Xiumei Zhang, Haiyan Nan, Shaoqing Xiao, Xi Wan, Xiaofeng Gu, Aijun Du, Zhenhua Ni, Kostya Ostrikov

ABSTRACT

Epitaxial growth of atomically thin two-dimensional crystals such as transition metal dichalcogenides remains challenging, especially for producing large-size transition metal dichalcogenides bilayer crystals featuring high density of states, carrier mobility and stability at room temperature. Here we achieve in epitaxial growth of the second monolayer from the first monolayer by reverse-flow chemical vapor epitaxy and produce high-quality, large-size transition metal dichalcogenides bilayer crystals with high yield, control, and reliability. Customized temperature profiles and reverse gas flow help activate the first layer without introducing new nucleation centers leading to near-defect-free epitaxial growth of the second layer from the existing nucleation centers. A series of bilayer crystals including MoS2 and WS2, ternary Mo1-xWxS2 and quaternary Mo1-xWxS2(1-y)Se2y are synthesized with variable structural configurations and tunable electronic and optical properties. The robust, potentially universal approach for the synthesis of large-size transition metal dichalcogenides bilayer single crystals is highly-promising for fundamental studies and technological applications. More... »

PAGES

598

References to SciGraph publications

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  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/s41467-019-08468-8

    DOI

    http://dx.doi.org/10.1038/s41467-019-08468-8

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1111917707

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/30723204


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