A simple and robust approach to reducing contact resistance in organic transistors View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-12

AUTHORS

Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp, Oana D. Jurchescu

ABSTRACT

Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. We find that the method is effective for both organic small molecule and polymer semiconductors, where we achieved a contact resistance as low as 200 Ωcm and device charge carrier mobilities as high as 20 cm2V-1s-1, independent of the applied gate voltage. More... »

PAGES

5130

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41467-018-07388-3

DOI

http://dx.doi.org/10.1038/s41467-018-07388-3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110228480

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30510263


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