Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-09-21

AUTHORS

Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin, Wu Shi, Kyunghoon Lee, Shuang Wu, Byung Yong Choi, Rohit Braganza, Jordan Lear, Nicholas Kau, Wonwoo Choi, Chen Chen, Zahra Pedramrazi, Tim Dumslaff, Akimitsu Narita, Xinliang Feng, Klaus Müllen, Felix Fischer, Alex Zettl, Pascal Ruffieux, Eli Yablonovitch, Michael Crommie, Roman Fasel, Jeffrey Bokor

ABSTRACT

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (Lch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (Ion > 1 μA at Vd = −1 V) and high Ion/Ioff ~ 105 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons. More... »

PAGES

633

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/s41467-017-00734-x

DOI

http://dx.doi.org/10.1038/s41467-017-00734-x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091807433

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/28935943


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