CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects View Full Text


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Article Info

DATE

2010-01

AUTHORS

Jacob S. Levy, Alexander Gondarenko, Mark A. Foster, Amy C. Turner-Foster, Alexander L. Gaeta, Michal Lipson

ABSTRACT

Silicon photonics enables the fabrication of on-chip, ultrahigh-bandwidth optical networks that are critical for the future of microelectronics1,2,3. Several optical components necessary for implementing a wavelength division multiplexing network have been demonstrated in silicon. However, a fully integrated multiple-wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for lasing, has been achieved on-chip through stimulated Raman scattering4,5, parametric mixing6 and by silicon nanocrystals7 or nanopatterned silicon8. Losses in most of these structures have prevented oscillation. Raman oscillators have been demonstrated9,10,11, but with a narrow gain bandwidth that is insufficient for wavelength division multiplexing. Here, we demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon. The device can generate more than 100 new wavelengths with operating powers below 50 mW. This source can form the backbone of a high-bandwidth optical network on a microelectronic chip. More... »

PAGES

37-40

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nphoton.2009.259

DOI

http://dx.doi.org/10.1038/nphoton.2009.259

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027366325


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