Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2 View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2015-05

AUTHORS

Vinod K. Sangwan, Deep Jariwala, In Soo Kim, Kan-Sheng Chen, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

ABSTRACT

Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices. More... »

PAGES

403-406

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nnano.2015.56

DOI

http://dx.doi.org/10.1038/nnano.2015.56

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009337975

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/25849785


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sangwan", 
        "givenName": "Vinod K.", 
        "id": "sg:person.01052500522.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01052500522.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jariwala", 
        "givenName": "Deep", 
        "id": "sg:person.01351116563.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01351116563.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "In Soo", 
        "id": "sg:person.01013047717.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01013047717.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chen", 
        "givenName": "Kan-Sheng", 
        "id": "sg:person.0677767566.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0677767566.32"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA", 
            "Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Marks", 
        "givenName": "Tobin J.", 
        "id": "sg:person.01055043707.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01055043707.32"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lauhon", 
        "givenName": "Lincoln J.", 
        "id": "sg:person.01353422603.00", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01353422603.00"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Northwestern University", 
          "id": "https://www.grid.ac/institutes/grid.16753.36", 
          "name": [
            "Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA", 
            "Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hersam", 
        "givenName": "Mark C.", 
        "id": "sg:person.01235042322.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01235042322.38"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.4803920", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001109154"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn500532f", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005322378"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1166/jno.2008.301", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006559047"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/ncomms5867", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1007070134", 
          "https://doi.org/10.1038/ncomms5867"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrc.2013.32", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008329926"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn500064s", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1013761488"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201004497", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014468260"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat3633", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016046837", 
          "https://doi.org/10.1038/nmat3633"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/ncomms4473", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016194907", 
          "https://doi.org/10.1038/ncomms4473"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2023", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016486670", 
          "https://doi.org/10.1038/nmat2023"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl402150r", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016843256"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/jproc.2010.2066531", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019858347"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4821185", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020006329"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn503988x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020208159"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.102.026801", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020378137"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.102.026801", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020378137"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0957-4484/18/36/365202", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1025331628"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s00339-011-6264-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028861620", 
          "https://doi.org/10.1007/s00339-011-6264-9"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn405827t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037249740"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature08940", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039201135", 
          "https://doi.org/10.1038/nature08940"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature08940", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039201135", 
          "https://doi.org/10.1038/nature08940"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat3673", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040210542", 
          "https://doi.org/10.1038/nmat3673"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2748", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041571890", 
          "https://doi.org/10.1038/nmat2748"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2748", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041571890", 
          "https://doi.org/10.1038/nmat2748"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2008.160", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044890410", 
          "https://doi.org/10.1038/nnano.2008.160"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2012.240", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045168777", 
          "https://doi.org/10.1038/nnano.2012.240"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0957-4484/23/30/305205", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046114635"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2010.279", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047704758", 
          "https://doi.org/10.1038/nnano.2010.279"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature06932", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052714473", 
          "https://doi.org/10.1038/nature06932"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl901874j", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056222074"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl901874j", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056222074"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn501181t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056225995"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nn501701a", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056226039"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2202121", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057846282"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2430912", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057856499"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4719198", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058051176"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tct.1971.1083337", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061579020"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-05", 
    "datePublishedReg": "2015-05-01", 
    "description": "Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO\u2082, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS\u2082 devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to \u223c10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS\u2082 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1038/nnano.2015.56", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.3020523", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.3000937", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1037429", 
        "issn": [
          "1748-3387", 
          "1748-3395"
        ], 
        "name": "Nature Nanotechnology", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "10"
      }
    ], 
    "name": "Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2", 
    "pagination": "403-406", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "2c7b9e21ea0c6cf8daf2fe42efe3d235f4aac9d5d13ee842d6a0973c19c0b9d5"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "25849785"
        ]
      }, 
      {
        "name": "nlm_unique_id", 
        "type": "PropertyValue", 
        "value": [
          "101283273"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1038/nnano.2015.56"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1009337975"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1038/nnano.2015.56", 
      "https://app.dimensions.ai/details/publication/pub.1009337975"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T15:38", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8664_00000422.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://www.nature.com/nnano/journal/v10/n5/full/nnano.2015.56.html"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1038/nnano.2015.56'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1038/nnano.2015.56'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1038/nnano.2015.56'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1038/nnano.2015.56'


 

This table displays all metadata directly associated to this object as RDF triples.

227 TRIPLES      21 PREDICATES      62 URIs      21 LITERALS      9 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1038/nnano.2015.56 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N15ee96a0dfcd4fa5891b6eb32e9bdf7e
4 schema:citation sg:pub.10.1007/s00339-011-6264-9
5 sg:pub.10.1038/nature06932
6 sg:pub.10.1038/nature08940
7 sg:pub.10.1038/ncomms4473
8 sg:pub.10.1038/ncomms5867
9 sg:pub.10.1038/nmat2023
10 sg:pub.10.1038/nmat2748
11 sg:pub.10.1038/nmat3633
12 sg:pub.10.1038/nmat3673
13 sg:pub.10.1038/nnano.2008.160
14 sg:pub.10.1038/nnano.2010.279
15 sg:pub.10.1038/nnano.2012.240
16 https://doi.org/10.1002/adma.201004497
17 https://doi.org/10.1021/nl402150r
18 https://doi.org/10.1021/nl901874j
19 https://doi.org/10.1021/nn405827t
20 https://doi.org/10.1021/nn500064s
21 https://doi.org/10.1021/nn500532f
22 https://doi.org/10.1021/nn501181t
23 https://doi.org/10.1021/nn501701a
24 https://doi.org/10.1021/nn503988x
25 https://doi.org/10.1063/1.2202121
26 https://doi.org/10.1063/1.2430912
27 https://doi.org/10.1063/1.4719198
28 https://doi.org/10.1063/1.4803920
29 https://doi.org/10.1063/1.4821185
30 https://doi.org/10.1088/0957-4484/18/36/365202
31 https://doi.org/10.1088/0957-4484/23/30/305205
32 https://doi.org/10.1103/physrevlett.102.026801
33 https://doi.org/10.1109/jproc.2010.2066531
34 https://doi.org/10.1109/tct.1971.1083337
35 https://doi.org/10.1166/jno.2008.301
36 https://doi.org/10.1557/mrc.2013.32
37 schema:datePublished 2015-05
38 schema:datePublishedReg 2015-05-01
39 schema:description Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
40 schema:genre research_article
41 schema:inLanguage en
42 schema:isAccessibleForFree true
43 schema:isPartOf N099ddd51900140bc8690ed13b7cd44fb
44 Ncc70ca71875a44fcb22da61d34485d2d
45 sg:journal.1037429
46 schema:name Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
47 schema:pagination 403-406
48 schema:productId N29d5895439df488099a9419c6bf299d6
49 N43c8a14efc664e3b8031c45c1915cb29
50 Nb4e09bef42ec4d2f969dad73e2d093f5
51 Nb5ab5696407e4b52847f26c09bf4636d
52 Nf404165b75e94aea8c6432b034dd5f77
53 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009337975
54 https://doi.org/10.1038/nnano.2015.56
55 schema:sdDatePublished 2019-04-10T15:38
56 schema:sdLicense https://scigraph.springernature.com/explorer/license/
57 schema:sdPublisher N261504b05d7342a489e92ebfd90ffa31
58 schema:url http://www.nature.com/nnano/journal/v10/n5/full/nnano.2015.56.html
59 sgo:license sg:explorer/license/
60 sgo:sdDataset articles
61 rdf:type schema:ScholarlyArticle
62 N099ddd51900140bc8690ed13b7cd44fb schema:volumeNumber 10
63 rdf:type schema:PublicationVolume
64 N101d480dda08404fb1689842ea6debd5 rdf:first sg:person.01351116563.13
65 rdf:rest Nb6a07f3d1dbe484d92232b58ee1c6e00
66 N143af1f35511442d8c41f31066df7528 rdf:first sg:person.01055043707.32
67 rdf:rest Ne4d5abc3a4924f7fa808e3f95ee18e06
68 N15ee96a0dfcd4fa5891b6eb32e9bdf7e rdf:first sg:person.01052500522.30
69 rdf:rest N101d480dda08404fb1689842ea6debd5
70 N261504b05d7342a489e92ebfd90ffa31 schema:name Springer Nature - SN SciGraph project
71 rdf:type schema:Organization
72 N29d5895439df488099a9419c6bf299d6 schema:name dimensions_id
73 schema:value pub.1009337975
74 rdf:type schema:PropertyValue
75 N43c8a14efc664e3b8031c45c1915cb29 schema:name pubmed_id
76 schema:value 25849785
77 rdf:type schema:PropertyValue
78 Nb4e09bef42ec4d2f969dad73e2d093f5 schema:name readcube_id
79 schema:value 2c7b9e21ea0c6cf8daf2fe42efe3d235f4aac9d5d13ee842d6a0973c19c0b9d5
80 rdf:type schema:PropertyValue
81 Nb5ab5696407e4b52847f26c09bf4636d schema:name nlm_unique_id
82 schema:value 101283273
83 rdf:type schema:PropertyValue
84 Nb6a07f3d1dbe484d92232b58ee1c6e00 rdf:first sg:person.01013047717.02
85 rdf:rest Nf4cc56572e8249f0ac914f6e91332458
86 Nc79652454a9a4a409fe8050a3889d4bb rdf:first sg:person.01235042322.38
87 rdf:rest rdf:nil
88 Ncc70ca71875a44fcb22da61d34485d2d schema:issueNumber 5
89 rdf:type schema:PublicationIssue
90 Ne4d5abc3a4924f7fa808e3f95ee18e06 rdf:first sg:person.01353422603.00
91 rdf:rest Nc79652454a9a4a409fe8050a3889d4bb
92 Nf404165b75e94aea8c6432b034dd5f77 schema:name doi
93 schema:value 10.1038/nnano.2015.56
94 rdf:type schema:PropertyValue
95 Nf4cc56572e8249f0ac914f6e91332458 rdf:first sg:person.0677767566.32
96 rdf:rest N143af1f35511442d8c41f31066df7528
97 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
98 schema:name Engineering
99 rdf:type schema:DefinedTerm
100 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
101 schema:name Materials Engineering
102 rdf:type schema:DefinedTerm
103 sg:grant.3000937 http://pending.schema.org/fundedItem sg:pub.10.1038/nnano.2015.56
104 rdf:type schema:MonetaryGrant
105 sg:grant.3020523 http://pending.schema.org/fundedItem sg:pub.10.1038/nnano.2015.56
106 rdf:type schema:MonetaryGrant
107 sg:journal.1037429 schema:issn 1748-3387
108 1748-3395
109 schema:name Nature Nanotechnology
110 rdf:type schema:Periodical
111 sg:person.01013047717.02 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
112 schema:familyName Kim
113 schema:givenName In Soo
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01013047717.02
115 rdf:type schema:Person
116 sg:person.01052500522.30 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
117 schema:familyName Sangwan
118 schema:givenName Vinod K.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01052500522.30
120 rdf:type schema:Person
121 sg:person.01055043707.32 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
122 schema:familyName Marks
123 schema:givenName Tobin J.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01055043707.32
125 rdf:type schema:Person
126 sg:person.01235042322.38 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
127 schema:familyName Hersam
128 schema:givenName Mark C.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01235042322.38
130 rdf:type schema:Person
131 sg:person.01351116563.13 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
132 schema:familyName Jariwala
133 schema:givenName Deep
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01351116563.13
135 rdf:type schema:Person
136 sg:person.01353422603.00 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
137 schema:familyName Lauhon
138 schema:givenName Lincoln J.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01353422603.00
140 rdf:type schema:Person
141 sg:person.0677767566.32 schema:affiliation https://www.grid.ac/institutes/grid.16753.36
142 schema:familyName Chen
143 schema:givenName Kan-Sheng
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0677767566.32
145 rdf:type schema:Person
146 sg:pub.10.1007/s00339-011-6264-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028861620
147 https://doi.org/10.1007/s00339-011-6264-9
148 rdf:type schema:CreativeWork
149 sg:pub.10.1038/nature06932 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052714473
150 https://doi.org/10.1038/nature06932
151 rdf:type schema:CreativeWork
152 sg:pub.10.1038/nature08940 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039201135
153 https://doi.org/10.1038/nature08940
154 rdf:type schema:CreativeWork
155 sg:pub.10.1038/ncomms4473 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016194907
156 https://doi.org/10.1038/ncomms4473
157 rdf:type schema:CreativeWork
158 sg:pub.10.1038/ncomms5867 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007070134
159 https://doi.org/10.1038/ncomms5867
160 rdf:type schema:CreativeWork
161 sg:pub.10.1038/nmat2023 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016486670
162 https://doi.org/10.1038/nmat2023
163 rdf:type schema:CreativeWork
164 sg:pub.10.1038/nmat2748 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041571890
165 https://doi.org/10.1038/nmat2748
166 rdf:type schema:CreativeWork
167 sg:pub.10.1038/nmat3633 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016046837
168 https://doi.org/10.1038/nmat3633
169 rdf:type schema:CreativeWork
170 sg:pub.10.1038/nmat3673 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040210542
171 https://doi.org/10.1038/nmat3673
172 rdf:type schema:CreativeWork
173 sg:pub.10.1038/nnano.2008.160 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044890410
174 https://doi.org/10.1038/nnano.2008.160
175 rdf:type schema:CreativeWork
176 sg:pub.10.1038/nnano.2010.279 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047704758
177 https://doi.org/10.1038/nnano.2010.279
178 rdf:type schema:CreativeWork
179 sg:pub.10.1038/nnano.2012.240 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045168777
180 https://doi.org/10.1038/nnano.2012.240
181 rdf:type schema:CreativeWork
182 https://doi.org/10.1002/adma.201004497 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014468260
183 rdf:type schema:CreativeWork
184 https://doi.org/10.1021/nl402150r schema:sameAs https://app.dimensions.ai/details/publication/pub.1016843256
185 rdf:type schema:CreativeWork
186 https://doi.org/10.1021/nl901874j schema:sameAs https://app.dimensions.ai/details/publication/pub.1056222074
187 rdf:type schema:CreativeWork
188 https://doi.org/10.1021/nn405827t schema:sameAs https://app.dimensions.ai/details/publication/pub.1037249740
189 rdf:type schema:CreativeWork
190 https://doi.org/10.1021/nn500064s schema:sameAs https://app.dimensions.ai/details/publication/pub.1013761488
191 rdf:type schema:CreativeWork
192 https://doi.org/10.1021/nn500532f schema:sameAs https://app.dimensions.ai/details/publication/pub.1005322378
193 rdf:type schema:CreativeWork
194 https://doi.org/10.1021/nn501181t schema:sameAs https://app.dimensions.ai/details/publication/pub.1056225995
195 rdf:type schema:CreativeWork
196 https://doi.org/10.1021/nn501701a schema:sameAs https://app.dimensions.ai/details/publication/pub.1056226039
197 rdf:type schema:CreativeWork
198 https://doi.org/10.1021/nn503988x schema:sameAs https://app.dimensions.ai/details/publication/pub.1020208159
199 rdf:type schema:CreativeWork
200 https://doi.org/10.1063/1.2202121 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057846282
201 rdf:type schema:CreativeWork
202 https://doi.org/10.1063/1.2430912 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057856499
203 rdf:type schema:CreativeWork
204 https://doi.org/10.1063/1.4719198 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058051176
205 rdf:type schema:CreativeWork
206 https://doi.org/10.1063/1.4803920 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001109154
207 rdf:type schema:CreativeWork
208 https://doi.org/10.1063/1.4821185 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020006329
209 rdf:type schema:CreativeWork
210 https://doi.org/10.1088/0957-4484/18/36/365202 schema:sameAs https://app.dimensions.ai/details/publication/pub.1025331628
211 rdf:type schema:CreativeWork
212 https://doi.org/10.1088/0957-4484/23/30/305205 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046114635
213 rdf:type schema:CreativeWork
214 https://doi.org/10.1103/physrevlett.102.026801 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020378137
215 rdf:type schema:CreativeWork
216 https://doi.org/10.1109/jproc.2010.2066531 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019858347
217 rdf:type schema:CreativeWork
218 https://doi.org/10.1109/tct.1971.1083337 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061579020
219 rdf:type schema:CreativeWork
220 https://doi.org/10.1166/jno.2008.301 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006559047
221 rdf:type schema:CreativeWork
222 https://doi.org/10.1557/mrc.2013.32 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008329926
223 rdf:type schema:CreativeWork
224 https://www.grid.ac/institutes/grid.16753.36 schema:alternateName Northwestern University
225 schema:name Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
226 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
227 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...