Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-08-24

AUTHORS

Dillon Wong, Jairo Velasco, Long Ju, Juwon Lee, Salman Kahn, Hsin-Zon Tsai, Chad Germany, Takashi Taniguchi, Kenji Watanabe, Alex Zettl, Feng Wang, Michael F. Crommie

ABSTRACT

The scanning tunnelling microscope can be used to image and manipulate individual defects in bulk insulating hexagonal boron nitride by capping the material with a monolayer of graphene.

PAGES

949-953

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nnano.2015.188

DOI

http://dx.doi.org/10.1038/nnano.2015.188

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023927397

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/26301901


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