Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2014-04

AUTHORS

Britton W. H. Baugher, Hugh O. H. Churchill, Yafang Yang, Pablo Jarillo-Herrero

ABSTRACT

The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W(-1) and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials. More... »

PAGES

262-267

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nnano.2014.25

DOI

http://dx.doi.org/10.1038/nnano.2014.25

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007885725

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/24608231


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