Solid-state memories based on ferroelectric tunnel junctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-02

AUTHORS

André Chanthbouala, Arnaud Crassous, Vincent Garcia, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Julie Allibe, Bruno Dlubak, Julie Grollier, Stéphane Xavier, Cyrile Deranlot, Amir Moshar, Roger Proksch, Neil D. Mathur, Manuel Bibes, Agnès Barthélémy

ABSTRACT

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. More... »

PAGES

101

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nnano.2011.213

DOI

http://dx.doi.org/10.1038/nnano.2011.213

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008772088

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/22138863


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