Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2008-11-23

AUTHORS

A. J. Drew, J. Hoppler, L. Schulz, F. L. Pratt, P. Desai, P. Shakya, T. Kreouzis, W. P. Gillin, A. Suter, N. A. Morley, V. K. Malik, A. Dubroka, K. W. Kim, H. Bouyanfif, F. Bourqui, C. Bernhard, R. Scheuermann, G. J. Nieuwenhuys, T. Prokscha, E. Morenzoni

ABSTRACT

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these ‘spintronic’ devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the interfaces between the different materials and defects that are common to real devices. Knowledge of these factors is especially important for the relatively new field of organic spintronics, where there is a severe lack of suitable experimental techniques that can yield depth-resolved information about the spin polarization of charge carriers within buried layers of real devices. Here, we present a new depth-resolved technique for measuring the spin polarization of current-injected electrons in an organic spin valve and find the temperature dependence of the measured spin diffusion length is correlated with the device magnetoresistance. More... »

PAGES

109-114

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nmat2333

DOI

http://dx.doi.org/10.1038/nmat2333

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049715801

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/19029892


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11 schema:description Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these ‘spintronic’ devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the interfaces between the different materials and defects that are common to real devices. Knowledge of these factors is especially important for the relatively new field of organic spintronics, where there is a severe lack of suitable experimental techniques that can yield depth-resolved information about the spin polarization of charge carriers within buried layers of real devices. Here, we present a new depth-resolved technique for measuring the spin polarization of current-injected electrons in an organic spin valve and find the temperature dependence of the measured spin diffusion length is correlated with the device magnetoresistance.
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19 charge carriers
20 complex transfer process
21 defects
22 degree
23 dependence
24 depth-resolved information
25 depth-resolved technique
26 device magnetoresistance
27 devices
28 different layers
29 different materials
30 diffusion length
31 direct measurement
32 efficient transfer
33 electronic devices
34 electronic properties
35 electrons
36 experimental techniques
37 factors
38 field
39 freedom
40 future technologies
41 individual material properties
42 information
43 interface
44 knowledge
45 lack
46 layer
47 length
48 low energy muon spin rotation
49 magnetoresistance
50 material properties
51 materials
52 measurements
53 muon spin rotation
54 new field
55 organic spin valves
56 organic spintronics
57 performance
58 polarization
59 process
60 properties
61 prospects
62 real devices
63 rotation
64 severe lack
65 spin degrees
66 spin diffusion length
67 spin polarization
68 spin rotation
69 spin valves
70 spintronics
71 suitable experimental techniques
72 technique
73 technology
74 temperature dependence
75 transfer
76 transfer process
77 unique prospects
78 valve
79 schema:name Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation
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