Nanoionics-based resistive switching memories View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-11

AUTHORS

Rainer Waser, Masakazu Aono

ABSTRACT

Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues. More... »

PAGES

833-840

Journal

TITLE

Nature Materials

ISSUE

11

VOLUME

6

Author Affiliations

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  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/nmat2023

    DOI

    http://dx.doi.org/10.1038/nmat2023

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1016486670

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/17972938


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