Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3 View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2015-10-23

AUTHORS

Edwin Preciado, Florian J.R. Schülein, Ariana E. Nguyen, David Barroso, Miguel Isarraraz, Gretel von Son, I-Hsi Lu, Wladislaw Michailow, Benjamin Möller, Velveth Klee, John Mann, Achim Wixforth, Ludwig Bartels, Hubert J. Krenner

ABSTRACT

Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. More... »

PAGES

8593

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/ncomms9593

DOI

http://dx.doi.org/10.1038/ncomms9593

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031718489

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/26493867


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21 schema:description Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films.
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28 schema:keywords Integrated Optics
29 LiNbO3
30 LiNbO3 acousto-electric device
31 MoS2
32 MoS2 devices
33 MoS2/LiNbO3
34 MoS2/LiNbO3 acousto-electric device
35 acoustic photodetector
36 acoustic wave radio frequencies devices
37 acoustic waves
38 acousto-electric device
39 activity
40 applications
41 archetypical ferroelectric material
42 batteries
43 birefringent properties
44 characteristics
45 chemical vapor deposition
46 choice
47 combination
48 contact-free manner
49 definition
50 deposition
51 devices
52 direct chemical vapor deposition
53 direct growth
54 direction
55 electrical characteristics
56 electrical properties
57 electrical transport
58 fabrication
59 ferroelectric materials
60 field-effect transistor structure
61 films
62 findings
63 frequency devices
64 growth
65 hamper application
66 hybrid MoS2/LiNbO3 acousto-electric device
67 investigation
68 lack
69 lithium niobate
70 lithographic definition
71 manner
72 materials
73 monolayer MoS2/LiNbO3
74 monolayer devices
75 monolayer films
76 niobate
77 non-invasive investigation
78 numerous applications
79 optical activity
80 optics
81 optoelectronics
82 photodetectors
83 piezoelectric
84 properties
85 prototypical device
86 radio frequency devices
87 route
88 scalable fabrication
89 scalable route
90 semiconducting transport hamper application
91 silicon
92 structure
93 substantial piezoelectric
94 substrate
95 substrate of choice
96 surface acoustic wave radio frequencies devices
97 top
98 transistor structure
99 transport
100 transport hamper application
101 unique combination
102 vapor deposition
103 wave radio frequencies devices
104 waves
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