High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2012-01

AUTHORS

Sunkook Kim, Aniruddha Konar, Wan-Sik Hwang, Jong Hak Lee, Jiyoul Lee, Jaehyun Yang, Changhoon Jung, Hyoungsub Kim, Ji-Beom Yoo, Jae-Young Choi, Yong Wan Jin, Sang Yoon Lee, Debdeep Jena, Woong Choi, Kinam Kim

ABSTRACT

Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm(2) V(-1) s(-1)), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors. More... »

PAGES

1011

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/ncomms2018

DOI

http://dx.doi.org/10.1038/ncomms2018

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041706133

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/22910357


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