Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2016-11-16

AUTHORS

Weiwei Lin, Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton, Dafiné Ravelosona

ABSTRACT

Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces. More... »

PAGES

13532

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/ncomms13532

DOI

http://dx.doi.org/10.1038/ncomms13532

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031049058

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/27848936


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44 schema:description Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>/MgO/TiO<sub>2</sub> structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.
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